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| 型号： | FDMC8010 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 8-PQFN |
| 标准包装： | 3,000 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 30A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 1.3 毫欧 @ 30A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 1mA |
| 闸电荷(Qg) @ Vgs： | 94nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 5860pF @ 15V |
| 功率 - 最大： | 2.4W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-PowerWDFN |
| 供应商设备封装： | 8-PQFN（3.3X3.3），Power33 |
| 包装： | 带卷 (TR) |
FDMC8010
N-Channel PowerTrench ? MOSFET
30 V, 75 A, 1.3 m Ω
Features
Max r DS(on) = 1.3 m Ω at V GS = 10 V, I D = 30 A
Max r DS(on) = 1.8 m Ω at V GS = 4.5 V, I D = 25 A
High performance technology for extremely low r DS(on)
Termination is Lead-free and RoHS Compliant
December 2011
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench ? process that has
been especially tailored to minimize the on-state resistance. This
device is well suited for applications where ultra low r DS(on) is
required in small spaces such as High performance VRM, POL
and Oring functions.
Applications
DC - DC Buck Converters
Point of Load
High Efficiency Load Switch and Low Side Switching
Oring FET
Pin 1
Pin 1
S
S
S
G
S
D
S
D
D
D
D
D
S
G
D
D
Top
Bottom
Power 33
MOSFET Maximum Ratings T A = 25 °C unless otherwise noted
Symbol
V DS
V GS
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
T C = 25 °C
Ratings
30
20
75
Units
V
V
I D
-Continuous (Silicon limited)
-Continuous
T C = 25 °C
T A = 25 °C
(Note 1a)
166
30
A
-Pulsed
120
E AS
Single Pulse Avalance Energy
(Note 3)
153
mJ
P D
Power Dissipation
Power Dissipation
T C = 25 °C
T A = 25 °C
(Note 1a)
54
2.4
W
T J , T STG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
R θ JC
R θ JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(Note 1a)
2.3
53
°C/W
Package Marking and Ordering Information
Device Marking
FDMC8010
Device
FDMC8010
Package
Power 33
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
?2011 Fairchild Semiconductor Corporation
FDMC8010 Rev.C
1
www.fairchildsemi.com
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PDF描述 |
|---|---|
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| FDMC8200S | MOSFET N-CH DUAL 30V 8MLP |
| FDMC8200 | MOSFET 2N-CH 30V 8A/12A POWER33 |
| FDMC8321L | MOSFET N-CH 44V 49A 8-PQFN |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDMC8010A | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FDMC8015L | 功能描述:MOSFET 40V N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMC8026S | 功能描述:MOSFET 30V N-Channel PowerTrench SyncFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMC8030 | 功能描述:MOSFET FPS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMC8032L | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N-CH DUAL 40V 8-MLP 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET 40V Dual N-Channel PowerTrench MOSFET |
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