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| 型号： | FDMC8030 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 40V DUAL 8-MLP |
| 标准包装： | 3,000 |
| 系列： | PowerTrench® |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 40V |
| 电流 - 连续漏极(Id) @ 25° C： | 12A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 10 毫欧 @ 12A，10V |
| Id 时的 Vgs(th)（最大）： | 2.8V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 30nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1975pF @ 20V |
| 功率 - 最大： | 800mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-PowerWDFN |
| 供应商设备封装： | 8-MLP（3x3） |
| 包装： | 带卷 (TR) |
July 2013
FDMC8030
Dual N-Channel Power Trench ? MOSFET
40 V, 12 A, 10 m Ω
Features
Max r DS(on) = 10 m Ω at V GS = 10 V, I D = 12 A
Max r DS(on) = 14 m Ω at V GS = 4.5 V, I D = 10 A
Max r DS(on) = 28 m Ω at V GS = 3.2 V, I D = 4 A
Termination is Lead-free and RoHS Compliant
General Description
This device includes two 40V N-Channel MOSFETs in a dual
Power 33 (3 mm X 3 mm MLP) package. The package is
enhanced for exceptional thermal performance.
Applications
Battery Protection
Load Switching
Point of Load
Pin 1
G1 S1 S1 S1
Bottom Drain2 Contact
G2
8
1 G1
D1
S2
7
Q2
2 S1
D2
S2
6
Q1
3 S1
G2 S2 S2 S2
S2
5
Bottom Drain1 Contact
4 S1
Power 33
MOSFET Maximum Ratings T A = 25 °C unless otherwise noted
Symbol
V DS
Drain to Source Voltage
Parameter
Ratings
40
Units
V
V GS
Gate to Source Voltage
(Note 4)
±12
V
I D
Drain Current
-Continuous
-Pulsed
T A = 25 °C
(Note 1a)
12
50
A
E AS
Single Pulse Avalanche Energy
(Note 3)
21
mJ
P D
Power Dissipation
Power Dissipation
T A = 25 °C
T A = 25 °C
(Note 1a)
(Note 1b)
1.9
0.8
W
T J , T STG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
R θ JA
R θ JA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
(Note 1a)
(Note 1b)
65
155
°C/W
Package Marking and Ordering Information
Device Marking
FDMC8030
Device
FDMC8030
Package
Power 33
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
?2011 Fairchild Semiconductor Corporation
FDMC8030 Rev.C1
1
www.fairchildsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDMC8032L | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N-CH DUAL 40V 8-MLP 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET 40V Dual N-Channel PowerTrench MOSFET |
| FDMC8200 | 功能描述:MOSFET DUAL N-CHANNEL PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMC8200 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET Transistor |
| FDMC8200_F128 | 功能描述:MOSFET Dual N-CH 30V 12A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMC8200-CUT TAPE | 制造商:FAIRCHILD 功能描述:FDMC8200 Series 30 V 20 mOhm Dual N-Channel PowerTrench?Mosfet - Power33 |
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