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参数资料
| 型号： | FDMC8030 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 3/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 40V DUAL 8-MLP |
| 标准包装： | 3,000 |
| 系列： | PowerTrench® |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 40V |
| 电流 - 连续漏极(Id) @ 25° C： | 12A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 10 毫欧 @ 12A，10V |
| Id 时的 Vgs(th)（最大）： | 2.8V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 30nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1975pF @ 20V |
| 功率 - 最大： | 800mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-PowerWDFN |
| 供应商设备封装： | 8-MLP（3x3） |
| 包装： | 带卷 (TR) |
Typical Characteristics T J = 25°C unless otherwise noted
50
V GS = 10 V
5
40
V GS = 4.5 V
V GS = 3.5 V
V GS = 3.2 V
4
V GS = 3 V
V GS =3.2 V
30
3
V GS = 3.5 V
20
V GS = 3 V
2
10
PULSE DURATION = 80 μ s
1
PULSE DURATION = 80 μ s
V GS = 4.5 V
V GS = 10 V
DUTY CYCLE = 0.5%MAX
DUTY CYCLE = 0.5%MAX
0
0
1
2
3
4
5
0
0
10
20
30
40
50
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
I D , DRAIN CURRENT(A)
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.6
1.4
I D = 12 A
V GS = 10 V
30
25
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5%MAX
I D = 12 A
20
1.2
1.0
0.8
15
10
5
T J = 25 o C
T J = 125 o C
0.6
-75
-50
-25 0 25 50 75 100 125 150
0
2
4
6
8
10
T J , JUNCTION TEMPERATURE ( o C )
Figure 3. Normalized On- Resistance
vs Junction Temperature
50
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
50
40
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5%MAX
V DS = 5 V
10
V GS = 0 V
30
20
10
T J = 150
o C
T J = 25 o C
T J = -55 o C
1
0.1
0.01
T J = 150 o C
T J = 25 o C
T J = -55 o C
0
1
2
3
4
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
V SD , BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
?2011 Fairchild Semiconductor Corporation
FDMC8030 Rev.C1
3
www.fairchildsemi.com
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