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参数资料
| 型号： | FDMC8200S |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/12页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH DUAL 30V 8MLP |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 6A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 20 毫欧 @ 6A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 10nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 660pF @ 15V |
| 功率 - 最大： | 2.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-WDFN 裸露焊盘 |
| 供应商设备封装： | 8-MLP（3.3X3.3），Power33 |
| 包装： | 标准包装 |
| 其它名称： | FDMC8200SDKR |
March 2011
FDMC8200S
Dual N-Channel PowerTrench ? MOSFET
30 V, 10 m Ω , 20 m Ω
Features
Q1: N-Channel
Max r DS(on) = 20 m Ω at V GS = 10 V, I D = 6 A
Max r DS(on) = 32 m Ω at V GS = 4.5 V, I D = 5 A
Q2: N-Channel
Max r DS(on) = 10 m Ω at V GS = 10 V, I D = 8.5 A
Max r DS(on) = 13.5 m Ω at V GS = 4.5 V, I D = 7.2 A
RoHS Compliant
Bottom
General Description
This device includes two specialized N-Channel MOSFETs in a
due power33(3mm X 3mm MLP) package. The switch node has
been internally connected to enable easy placement and routing
of synchronous buck converters. The control MOSFET (Q1) and
synchronous MOSFET (Q2) have been designed to provide
optimal power efficiency.
Applications
Mobile Computing
Mobile Internet Devices
General Purpose Point of Load
Bottom
D2/
G HS IN
OD
HN
Pin 1
G1
D1
D1
D1
D1
S1
S2
G2
S2
S2
V
V IN
V IN
V IN E
I TC
SW
GND
GND
GND
G LS
5
6
7
8
Q2
Q1
4
3
2
1
Power33
MOSFET Maximum Ratings T C = 25°C unless otherwise noted
Symbol
V DS
Drain to Source Voltage
Parameter
Q1
30
Q2
30
Units
V
V GS
I D
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
T C = 25 °C
T C = 25 °C
T A = 25 °C
(Note 4)
±20
18
23
6 1a
±20
13
46
8.5 1b
V
A
-Pulsed
40
27
E AS
Single Pulse Avalanche Energy
(Note 3)
12
32
P D
Power Dissipation for Single Operation
Power Dissipation for Single Operation
T A = 25°C
T A = 25°C
1.9 1a
0.7 1c
2.5 1b
1.0 1d
W
T J , T STG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
R θ JA
Thermal Resistance, Junction to Ambient
65 1a
50 1b
R θ JA
R θ JC
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
180 1c
7.5
125 1d
4.2
°C/W
Package Marking and Ordering Information
Device Marking
FDMC8200S
Device
FDMC8200S
Package
Power 33
Reel Size
13”
Tape Width
12 mm
Quantity
3000 units
?2011 Fairchild Semiconductor Corporation
FDMC8200S Rev.C4
1
www.fairchildsemi.com
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相关代理商/技术参数 |
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| FDMC8200S_F106 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N-CH DUAL 30V 8MLP |
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| FDMC8298 | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FDMC8321L | 功能描述:MOSFET 40V N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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