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| 型号： | FDMC8588 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 25V 17A 8-MLP |
| 标准包装： | 3,000 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 25V |
| 电流 - 连续漏极(Id) @ 25° C： | 17A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 5 毫欧 @ 18A，10V |
| Id 时的 Vgs(th)（最大）： | 1.8V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 12nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 1695pF @ 13V |
| 功率 - 最大： | 3W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-PowerVDFN |
| 供应商设备封装： | 8-PQFN（3.3X3.3），Power33 |
| 包装： | 带卷 (TR) |
FDMC8588
N-Channel PowerTrench ? MOSFET
25 V, 40 A, 5.7 m Ω
Features
Max r DS(on) = 5.7 m Ω at V GS = 4.5 V, I D = 16.5 A
State-of-the-art switching performance
Lower output capacitance, gate resistance, and gate charge
boost efficiency
Shielded gate technology reduces switch node ringing and
increases immunity to EMI and cross conduction
RoHS Compliant
June 2012
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers. It has been optimized
for low gate charge, low r DS(on), fast switching speed and body
diode reverse recovery performance.
Applications
High side switching for high end computing
High power density DC-DC synchronous buck converter
Top
Bottom
S
Pin 1
S
S
G
S
S
D
D
S
D
D
D
D
D
G
D
Power 33
MOSFET Maximum Ratings T A = 25 °C unless otherwise noted
Symbol
Parameter
Ratings
Units
V DS
V GS
Drain to Source Voltage
Gate to Source Voltage
Drain Current
- Continuous (Package limited) T C = 25 °C
(Note 5)
(Note 4)
25
±12
40
V
V
I D
- Continuous (Silicon Limited)
- Continuous
T C = 25 °C
(Note 1a)
59
16.5
A
- Pulsed
60
E AS
Single Pulse Avalanche Energy
(Note 3)
29
mJ
P D
Power Dissipation
Power Dissipation
T C = 25 °C
T A = 25 °C
(Note 1a)
26
2.4
W
T J , T STG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
R θ JC
R θ JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
T C = 25 °C
T A = 25 °C
(Note 1a)
4.7
53
°C/W
Package Marking and Ordering Information
Device Marking
08OD
Device
FDMC8588
Package
Power 33
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
?2012 Fairchild Semiconductor Corporation
FDMC8588 Rev.D3
1
www.fairchildsemi.com
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相关代理商/技术参数 |
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| FDMC8588DC | 功能描述:MOSFET 25V N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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| FDMC86102 | 功能描述:MOSFET 100/20V N-Chan PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMC86102_12 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel Power Trench?? MOSFET 100 V, 20 A, 24 m?? |
| FDMC86102L | 功能描述:MOSFET 100V N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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