参数资料
型号: FDMC86116LZ
厂商: Fairchild Semiconductor
文件页数: 1/7页
文件大小: 0K
描述: MOSFET N-CH 100V 3.3A 8-MLP
标准包装: 3,000
系列: PowerTrench®
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 100V
电流 - 连续漏极(Id) @ 25° C: 3.3A
开态Rds(最大)@ Id, Vgs @ 25° C: 103 毫欧 @ 3.3A,10V
Id 时的 Vgs(th)(最大): 2.2V @ 250µA
闸电荷(Qg) @ Vgs: 6nC @ 10V
输入电容 (Ciss) @ Vds: 310pF @ 50V
功率 - 最大: 2.3W
安装类型: *
封装/外壳: *
供应商设备封装: *
包装: *
November 2013
FDMC86116LZ
N-Channel Shielded Gate PowerTrench ? MOSFET
100 V, 7.5 A, 103 m Ω
Features
Shielded Gate MOSFET Technology
Max r DS(on) = 103 m Ω at V GS = 10 V, I D = 3.3 A
Max r DS(on) = 153 m Ω at V GS = 4.5 V, I D = 2.7 A
HBM ESD protection level > 3 KV typical (Note 4)
100% UIL Tested
RoHS Compliant
Top
Bottom
General Description
This N-Channel logic Level MOSFETs are produced using
Fairchild Semiconductor‘s advanced PowerTrench ? process
that incorporates Shielded Gate technology. This process has
been optimized for the on-state resistance and yet maintain
superior switching performance. G-S zener has been added to
enhance ESD voltage level.
Application
DC - DC Conversion
8
7
6
5
D D D D
S
D
S
S
G
D
D
D
1
2 3 4
G S S S
MLP 3.3x3.3
MOSFET Maximum Ratings T A = 25 °C unless otherwise noted
Symbol
V DS
V GS
Drain to Source Voltage
Gate to Source Voltage
Parameter
Ratings
100
±20
Units
V
V
I D
Drain Current -Continuous
T C = 25 °C
7.5
-Continuous
T A = 25 °C
(Note 1a)
3.3
A
-Pulsed
15
E AS
Single Pulse Avalanche Energy
(Note 3)
12
mJ
P D
Power Dissipation
Power Dissipation
T C = 25 °C
T A = 25 °C
(Note 1a)
19
2.3
W
T J , T STG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
R θ JC
R θ JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(Note 1a)
6.5
53
°C/W
Package Marking and Ordering Information
Device Marking
FDMC86116Z
Device
FDMC86116LZ
Package
Power 33
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
?2011 Fairchild Semiconductor Corporation
FDMC86116LZ Rev.C2
1
www.fairchildsemi.com
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