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| 型号： | FDMC8622 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 100V 4A POWER33 |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 4A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 56 毫欧 @ 4A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 7.3nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 402pF @ 50V |
| 功率 - 最大： | 2.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-PowerWDFN |
| 供应商设备封装： | 8-MLP（3.3X3.3），Power33 |
| 包装： | 标准包装 |
| 其它名称： | FDMC8622DKR |
October 2013
FDMC8622
N-Channel Shielded Gate PowerTrench ? MOSFET
100 V, 16 A, 56 m Ω
Features
General Description
Shielded Gate MOSFET Technology
This N-Channel MOSFET is
produced using Fairchild
Max r DS(on) = 56 m Ω at V GS = 10 V, I D = 4 A
Max r DS(on) = 90 m Ω at V GS = 6 V, I D = 3 A
High performance trench technology for extremely low r DS(on)
High power and current handling capability in a widely used
surface mount package
100% UIL Tested
Termination is Lead-free and RoHS Compliant
Semiconductor‘s advanced PowerTrench ? process that
incorporates Shielded Gate technology. This process has been
optimized for r DS(on) , switching performance and ruggedness.
Application
DC-DC Primary Switch
Top
Bottom
8
7
6
5
D D D D
S
D
S
S
G
D
D
D
1
2 3 4
G S S S
MLP 3.3X3.3
MOSFET Maximum Ratings T A = 25 °C unless otherwise noted
Symbol
V DS
V GS
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
Parameter
T C = 25 °C
Ratings
100
±20
16
Units
V
V
I D
-Continuous
T A = 25 °C
(Note 1a)
4
A
-Pulsed
(Note 4)
30
E AS
Single Pulse Avalanche Energy
(Note 3)
37
mJ
P D
Power Dissipation
Power Dissipation
T C = 25 °C
T A = 25 °C
(Note 1a)
31
2.3
W
T J , T STG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
R θ JC
R θ JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(Note 1)
(Note 1a)
4.0
53
°C/W
Package Marking and Ordering Information
Device Marking
FDMC8622
Device
FDMC8622
Package
MLP 3.3X3.3
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
?2012 Fairchild Semiconductor Corporation
FDMC8622 Rev.C5
1
www.fairchildsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
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| FDMC86324 | MOSFET N-CH 80V 20A POWER33 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDMC86240 | 功能描述:MOSFET 150V N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMC86244 | 功能描述:MOSFET 150V N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMC86248 | 功能描述:MOSFET N-Channel MOSFET 600V, 3.8A, 2.5Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMC86260 | 功能描述:MOSFET NChan Sngle 150V 16A PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMC86261P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N CH 150V |
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