参数资料
型号: FDMC86520L
厂商: Fairchild Semiconductor
文件页数: 1/7页
文件大小: 0K
描述: MOSFET N-CH 60V 13.5A 8MLP
标准包装: 1
系列: PowerTrench®
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 60V
电流 - 连续漏极(Id) @ 25° C: 13.5A
开态Rds(最大)@ Id, Vgs @ 25° C: 7.9 毫欧 @ 13.5A,10V
Id 时的 Vgs(th)(最大): 3V @ 250µA
闸电荷(Qg) @ Vgs: 64nC @ 10V
输入电容 (Ciss) @ Vds: 4550pF @ 30V
功率 - 最大: 2.3W
安装类型: 表面贴装
封装/外壳: 8-WDFN 裸露焊盘
供应商设备封装: 8-MLP(3.3X3.3),Power33
包装: 标准包装
其它名称: FDMC86520LDKR
November 2013
FDMC86520L
N-Channel Power Trench ? MOSFET
60 V, 22 A, 7.9 m Ω
Features
Max r DS(on) = 7.9 m Ω at V GS = 10 V, I D = 13.5 A
Max r DS(on) = 11.7 m Ω at V GS = 4.5 V, I D = 11.5 A
Low Profile - 1 mm max in Power 33
100% UIL Tested
RoHS Compliant
Top
Bottom
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers.It has been optimized
for low gate charge, low r DS(on) , fast switching speed and body
diode reverse recovery performance.
Applications
Primary Switch in isolated DC-DC
Synchronous Rectifier
Load Switch
Pin 1
S
S
S
G
D
D
5
6
4
3
G
S
D
7
2
S
D
D
D
D
D
8
1
S
MLP 3.3x3.3
MOSFET Maximum Ratings T A = 25 °C unless otherwise noted
Symbol
V DS
V GS
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
T C = 25 °C
Ratings
60
±20
22
Units
V
V
I D
-Continuous (Silicon limited)
-Continuous
T C = 25 °C
T A = 25 °C
(Note 1a)
55
13.5
A
-Pulsed
60
E AS
Single Pulse Avalanche Energy
(Note 3)
79
mJ
P D
Power Dissipation
Power Dissipation
T C = 25 °C
T A = 25 °C
(Note 1a)
40
2.3
W
T J , T STG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
R θ JC
R θ JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(Note 1a)
3.1
53
°C/W
Package Marking and Ordering Information
Device Marking
FDMC86520L
Device
FDMC86520L
Package
Power 33
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
?2011 Fairchild Semiconductor Corporation
FDMC86520L Rev . C1
1
www.fairchildsemi.com
相关PDF资料
PDF描述
FDMC8854 MOSFET N-CH 30V 15A POWER33
FDMC8878 MOSFET N-CH 30V 9.6A POWER33
FDMC8882 MOSFET N-CH 30V 8-MLP
FDMC8884 MOSFET N-CH 30V 9A POWER33
FDME1023PZT MOSFET P-CH 20V 2.6A 6-MICROFET
相关代理商/技术参数
参数描述
FDMC86570L 功能描述:MOSFET 60V N Chan Shielded Gate Power Trench RoHS:否 制造商:Fairchild Semiconductor 晶体管极性:N-Channel 汲极/源极击穿电压:60 V 闸/源击穿电压: 漏极连续电流:56 A 电阻汲极/源极 RDS(导通):6.5 mOhms 配置:Single 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:Power-33 封装:Reel
FDMC8676 功能描述:MOSFET 30V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDMC8676_07 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench MOSFET
FDMC8678S 功能描述:MOSFET 30V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDMC8854 功能描述:MOSFET 30V N-Ch Power Trench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube