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| 型号： | FDME1023PZT |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V 2.6A 6-MICROFET |
| 标准包装： | 5,000 |
| 系列： | PowerTrench® |
| FET 型： | 2 个 P 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.6A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 142 毫欧 @ 2.3A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 7.7nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 405pF @ 10V |
| 功率 - 最大： | 600mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-WDFN 裸露焊盘 |
| 供应商设备封装： | 6-MicroFET（1.6x1.6） |
| 包装： | 带卷 (TR) |
July 2010
FDME1023PZT
Dual P-Channel PowerTrench ? MOSFET
-20 V, -2.6 A, 142 m Ω
Features
Max r DS(on) = 142 m Ω at V GS = -4.5 V, I D = -2.3 A
Max r DS(on) = 213 m Ω at V GS = -2.5 V, I D = -1.8 A
Max r DS(on) = 331 m Ω at V GS = -1.8 V, I D = -1.5 A
Max r DS(on) = 530 m Ω at V GS = -1.5 V, I D = -1.2 A
Low profile: 0.55 mm maximum in the new package
MicroFET 1.6x1.6 Thin
Free from halogenated compounds and antimony oxides
HBM ESD protection level > 1600 V (Note 3)
RoHS Compliant
General Description
This device is designed specifically as a single package solution
for the battery charges switch in cellular handset and other
ultra-portable applications. It features two independent
P-Channel MOSFETs with low on-state resistance for minimum
conduction losses. When connected in the typical common
source configuration, bi-directional current flow is possible.
The MicroFET 1.6x1.6 Thin package offers exceptional thermal
performance for it's physical size and is well suited to switching
and linear mode applications.
Applications
Load Switch
Battery Charging
Battery Disconnect Switch
D2
G1
S1
D2
S1 1
6
D1
Pin 1
D1
S2
G1 2
5
G2
G2
BOTTOM
D1
TOP
D2 3
4
S2
MicroFET 1.6x1.6 Thin
MOSFET Maximum Ratings T A = 25 °C unless otherwise noted
Symbol
V DS
V GS
Drain to Source Voltage
Gate to Source Voltage
Parameter
Ratings
-20
±8
Units
V
V
I D
Drain Current
-Continuous
-Pulsed
T A = 25 °C
(Note 1a)
-2.6
-6
A
P D
Power Dissipation for Single Operation
Power Dissipation for Single Operation
T A = 25 °C
T A = 25 °C
(Note 1a)
(Note 1b)
1.4
0.6
W
T J , T STG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
R θ JA
R θ JA
Thermal Resistance, Junction to Ambient (Single Operation)
Thermal Resistance, Junction to Ambient (Single Operation)
(Note 1a)
(Note 1b)
90
195
°C/W
Package Marking and Ordering Information
Device Marking
2T
Device
FDME1023PZT
Package
MicroFET 1.6x1.6 Thin
Reel Size
7 ’’
Tape Width
8 mm
Quantity
5000 units
?2010 Fairchild Semiconductor Corporation
FDME1023PZT Rev.C1
1
www.fairchildsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDME1024NZT | 功能描述:MOSFET 20V Dual N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDME1024NZT ENG | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FDME1034CZT | 功能描述:MOSFET 20V Complementary PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDME410NZT | 功能描述:MOSFET 20V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDME430NT | 功能描述:MOSFET 30V N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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