参数资料
型号: FDML7610S
厂商: Fairchild Semiconductor
文件页数: 1/15页
文件大小: 0K
描述: MOSFET N-CH 30V DUAL 8-MLP
标准包装: 1
系列: PowerTrench®
FET 型: 2 个 N 沟道(双)
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 12A,17A
开态Rds(最大)@ Id, Vgs @ 25° C: 7.5 毫欧 @ 12A,10V
Id 时的 Vgs(th)(最大): 3V @ 250µA
闸电荷(Qg) @ Vgs: 28nC @ 10V
输入电容 (Ciss) @ Vds: 1750pF @ 15V
功率 - 最大: 800mW,900mW
安装类型: 表面贴装
封装/外壳: 8-MLP
供应商设备封装: 8-MLP(3x4.5)
包装: 标准包装
其它名称: FDML7610SDKR
April 2013
FDML7610S
PowerTrench ? Power Stage
Asymmetric Dual N-Channel MOSFET
Features
Q1: N-Channel
Max r DS(on) = 7.5 m Ω at V GS = 10 V, I D = 12 A
Max r DS(on) = 12 m Ω at V GS = 4.5 V, I D = 10 A
Q2: N-Channel
Max r DS(on) = 4.2 m Ω at V GS = 10 V, I D = 17 A
Max r DS(on) = 5.5 m Ω at V GS = 4.5 V, I D = 14 A
RoHS Compliant
General Description
This device includes two specialized N-Channel MOSFETs in a
dual MLP package.The switch node has been internally
connected to enable easy placement and routing of synchronous
buck converters. The control MOSFET (Q1) and synchronous
SyncFET TM (Q2) have been designed to provide optimal power
efficiency.
Applications
Computing
Communications
General Purpose Point of Load
Notebook V CORE
Pin 1
G1
D1
D1
D1
D1
PHASE
(S1/D2)
S2
S2
S2
5
6
7
Q2
PHASE
4 D1
3 D1
2 D1
G2
S2
S2
S2
G2
8
Q1
1 G1
Top
MLP 3X4.5
Bottom
MOSFET Maximum Ratings T A = 25 °C unless otherwise noted
Symbol
V DS
Drain to Source Voltage
Parameter
Q1
30
Q2
30
Units
V
V GS
I D
Gate to Source Voltage
Drain Current
-Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
(Note 3)
T C = 25 °C
T C = 25 °C
T A = 25 °C
±20
30
40
12 1a
±20
28
60
17 1b
V
A
-Pulsed
40
40
P D
Power Dissipation for Single Operation
T A = 25 °C
T A = 25 °C
2.1 1a
0.8 1c
2.2 1b
0.9 1d
W
T J , T STG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
R θ JA
Thermal Resistance, Junction to Ambient
60 1a
56 1b
R θ JA
R θ JC
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
150 1c
4
140 1d
3.5
°C/W
Package Marking and Ordering Information
Device Marking
FDML7610S
Device
FDML7610S
Package
MLP3X4.5
Reel Size
13 ”
Tape Width
12 mm
Quantity
3000 units
?2013 Fairchild Semiconductor Corporation
FDML7610S Rev.C1
1
www.fairchildsemi.com
相关PDF资料
PDF描述
FDMQ8203 MOSFET N/P-CH 100V DUAL 12-MLP
FDMQ8403 MOSFET N-CH 100V 6A 12-MLP
FDMS015N04B MOSFET N-CH 40V 31.3A 8-PQFN
FDMS0312S MOSFET N-CH 30V 19A POWER56
FDMS039N08B MOSFET N-CH 80V 19.4A POWER56
相关代理商/技术参数
参数描述
FDMQ8203 功能描述:MOSFET Dual PT5 N-Ch & Dual PT1 PCH PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDMQ8403 功能描述:MOSFET SER BOOST LED DRVR RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDMQ86530L 功能描述:MOSFET 60V N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDMQ86530L_13 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:GreenBridgeTM Series of High-Efficiency Bridge Rectifiers N-Channel PowerTrench MOSFET
FDMS015N04B 功能描述:MOSFET NCh40V100A,1.5m ohms PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube