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| 型号： | FDMS015N04B |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 40V 31.3A 8-PQFN |
| 标准包装： | 3,000 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 40V |
| 电流 - 连续漏极(Id) @ 25° C： | 31.3A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 1.5 毫欧 @ 50A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 118nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 8725pF @ 20V |
| 功率 - 最大： | 2.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-PowerTDFN |
| 供应商设备封装： | Power56 |
| 包装： | 带卷 (TR) |
November 2013
FDMS015N04B
N-Channel PowerTrench ? MOSFET
40 V, 100 A, 1.5 m Ω
Features
? R DS(on) = 1.13 m Ω (Typ.) @ V GS = 10 V, I D = 50 A
? Advanced Package and Silicon Combination for Low R DS(on)
and High Efficiency
? Fast Switching Speed
? 100% UIL Tested
? RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor ’s advance PowerTrench ? process that has
been tailored to minimize the on-state resistance while main-
taining superior switching performance.
Applications
? Synchronous Rectification for ATX / Server
? Battery Protection Circuit
? Motor Drives and Uninterruptible Power Supplies
Top
Bottom
S
S
S
Pin 1
G
D
D
5
6
4
3
G
S
D
D
D
D
D
D
7
8
2
1
S
S
Power 56
MOSFET Maximum Ratings T C = 25 o C unless otherwise noted.
Symbol
V DSS
Drain to Source Voltage
Parameter
FDMS015N04B
40
Unit
V
V GSS
I D
I DM
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (T C = 25 o C)
- Continuous (T A = 25 o C)
- Pulsed
(Note 1a)
(Note 2)
±20
100
31.3
400
V
A
A
(T C = 25 o C)
(T A = 25 o C)
C
E AS
P D
T J , T STG
Single Pulsed Avalanche Energy
Power Dissipation
Operating and Storage Temperature Range
(Note 3)
(Note 1a)
526
104
2.5
-55 to +150
mJ
W
W
o
Thermal Characteristics
Symbol
Parameter
FDMS015N04B
Unit
R θ JC
R θ JA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
(Note 1a)
1.2
50
o C/W
?2012 Fairchild Semiconductor Corporation
FDMS015N04B Rev. C3
1
www.fairchildsemi.com
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