参数资料
型号: FDMS015N04B
厂商: Fairchild Semiconductor
文件页数: 8/9页
文件大小: 0K
描述: MOSFET N-CH 40V 31.3A 8-PQFN
标准包装: 3,000
系列: PowerTrench®
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 40V
电流 - 连续漏极(Id) @ 25° C: 31.3A
开态Rds(最大)@ Id, Vgs @ 25° C: 1.5 毫欧 @ 50A,10V
Id 时的 Vgs(th)(最大): 4V @ 250µA
闸电荷(Qg) @ Vgs: 118nC @ 10V
输入电容 (Ciss) @ Vds: 8725pF @ 20V
功率 - 最大: 2.5W
安装类型: 表面贴装
封装/外壳: 8-PowerTDFN
供应商设备封装: Power56
包装: 带卷 (TR)
Mechnical Dimensions
Figure 18. 8LD, PQFN, JEDEC MO-240 AA, 5.0X6.0MM
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifi-
cally the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor ’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_PQOAM-008
?2012 Fairchild Semiconductor Corporation
FDMS015N04B Rev. C3
8
www.fairchildsemi.com
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