参数资料
型号: FDMS039N08B
厂商: Fairchild Semiconductor
文件页数: 1/9页
文件大小: 0K
描述: MOSFET N-CH 80V 19.4A POWER56
标准包装: 1
系列: PowerTrench®
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 80V
电流 - 连续漏极(Id) @ 25° C: 19.4A
开态Rds(最大)@ Id, Vgs @ 25° C: 3.9 毫欧 @ 50A,10V
Id 时的 Vgs(th)(最大): 4.5V @ 250µA
闸电荷(Qg) @ Vgs: 100nC @ 10V
输入电容 (Ciss) @ Vds: 7600pF @ 40V
功率 - 最大: 2.5W
安装类型: 表面贴装
封装/外壳: 8-PowerTDFN
供应商设备封装: Power56
包装: 标准包装
其它名称: FDMS039N08BDKR
November 2013
FDMS039N08B
N-Channel PowerTrench ? MOSFET
80 V, 100 A, 3.9 m Ω
Features
? R DS(on) = 3.2 m Ω (Typ.) @ V GS = 10 V, I D = 50 A
? Low FOM R DS(on) * Q G
? Low Reverse Recovery Charge, Q rr = 80 nC
? Soft Reverse Recovery Body Diode
? Enables Highly Efficiency in Synchronous Rectification
? Fast Switching Speed
? 100% UIL Tested
? RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild Semicon-
ductor ’s advance PowerTrench ? process that has been tailored
to minimize the on-state resistance while maintaining superior
switching performance.
Applications
? Synchronous Rectification for ATX / Server / Telecom PSU
? Battery Protection Circuit
? Motor drives and Uninterruptible Power Supplies
Top
Bottom
S
S
S
Pin 1
G
D
D
5
6
4
3
G
S
D
D
D
D
D
D
7
8
2
1
S
S
Power 56
MOSFET Maximum Ratings T C = 25 o C unless otherwise noted.
Symbol
V DSS
Drain to Source Voltage
Parameter
FDMS039N08B
80
Unit
V
V GSS
I D
I DM
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (T C = 25 o C)
- Continuous (T A = 25 o C)
- Pulsed
(Note 1a)
(Note 2)
±20
100
19.4
400
V
A
A
(T C = 25 o C)
(T A = 25 o C)
C
E AS
P D
T J , T STG
Single Pulsed Avalanche Energy
Power Dissipation
Operating and Storage Temperature Range
(Note 3)
(Note 1a)
240
104
2.5
-55 to +150
mJ
W
W
o
Thermal Characteristics
Symbol
Parameter
FDMS039N08B
Unit
R θ JC
R θ JA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
(Note 1a)
1.2
50
o C/W
?2011 Fairchild Semiconductor Corporation
FDMS039N08B Rev. C4
1
www.fairchildsemi.com
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