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| 型号： | FDMS2572 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 150V 4.5A POWER56 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Design/Process Change Notification 16/May/2007 |
| 产品目录绘图： | Power56 Single |
| 标准包装： | 1 |
| 系列： | UltraFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 150V |
| 电流 - 连续漏极(Id) @ 25° C： | 4.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 47 毫欧 @ 4.5A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 43nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 2610pF @ 75V |
| 功率 - 最大： | 2.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-MLP，Power56 |
| 供应商设备封装： | Power56 |
| 包装： | 标准包装 |
| 产品目录页面： | 1609 (CN2011-ZH PDF) |
| 其它名称： | FDMS2572DKR |
December 2012
FDMS2572
N-Channel UltraFET Trench ? MOSFET
150V, 27A, 47m Ω
Features
General Description
Max r DS(on) = 47m Ω at V GS = 10V, I D = 4.5A
UItraFET devices combine characteristics
that enable
Max r DS(on) = 53m Ω at V GS = 6V, I D = 4.5A
Low Miller Charge
Optimized efficiency at high frequencies
UIS Capability (Single pulse and Repetitive pulse)
RoHS Compliant
benchmark efficiency in power conversion applications.
Optimized for r DS(on) , low ESR, low total and Miller gate charge,
these devices are ideal for high frequency DC to DC converters.
Application
Distributed Power Architectures and VRMs
Primary Switch for 24V and 48V Systems
High Voltage Synchronous Rectifier
Pin 1
S
S
S
G
D
D
D
5
6
7
4 G
3 S
2 S
D
D
D
D
D
8
1 S
Power 56 (Bottom view)
MOSFET Maximum Ratings T A = 25°C unless otherwise noted
Symbol
V DS
V GS
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
T C = 25°C
Ratings
150
±20
27
Units
V
V
I D
-Continuous (Silicon limited)
-Continuous
T C = 25°C
T A = 25°C
(Note 1a)
27
4.5
A
-Pulsed
30
E AS
Single Pulse Avalanche Energy
(Note 3)
150
mJ
P D
Power Dissipation
Power Dissipation
T C = 25°C
T A = 25°C
(Note 1a)
78
2.5
W
T J , T STG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
R θ JC
R θ JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(Note 1a)
1.6
50
°C/W
Package Marking and Ordering Information
Device Marking
FDMS2572
Device
FDMS2572
Package
Power 56
Reel Size
13’’
Tape Width
12mm
Quantity
3000 units
?2012 Fairchild Semiconductor Corporation
FDMS2572 Rev.C4
1
www.fairchildsemi.com
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PDF描述 |
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| FDMS2672 | MOSFET N-CH 200V 3.7A POWER56 |
| FDMS2734 | MOSFET N-CH 250V 2.8A POWER56 |
| FDMS3006SDC | MOSFET N-CH 30V 34A 8-PQFN |
| FDMS3008SDC | MOSFET N-CH 30V 29A 8-PQFN |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDMS2572 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDMS2572 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N CH 150V 4.5A POWER 56 |
| FDMS2572_07 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel UltraFET Trench㈢ MOSFET 150V, 27A, 47mз |
| FDMS2672 | 功能描述:MOSFET 200V N-Ch UltraFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMS2672_12 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel UltraFET Trench MOSFET 200V, 20A, 77m |
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