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| 型号： | FDMS3016DC |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 18A 8-PQFN |
| 标准包装： | 3,000 |
| 系列： | Dual Cool™, PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 18A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 6 毫欧 @ 12A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 23nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1385pF @ 15V |
| 功率 - 最大： | 3.3W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-PowerTDFN |
| 供应商设备封装： | Power56 |
| 包装： | 带卷 (TR) |
July 2013
FDMS3016DC
N-Channel Dual Cool TM PowerTrench ? MOSFET
30 V, 49 A, 6.0 m Ω
Features
General Description
Dual Cool
TM
Top Side Cooling PQFN package
This N-Channel MOSFET is
produced using Fairchild
Max r DS(on) = 6.0 m Ω at V GS = 10 V, I D = 12 A
Max r DS(on) = 9.0 m Ω at V GS = 4.5 V, I D = 10 A
High performance technology for extremely low r DS(on)
RoHS Compliant
Semiconductor’s advanced PowerTrench ? process.
Advancements in both silicon and Dual Cool TM package
technologies have been combined to offer the lowest r DS(on)
while maintaining excellent switching performance by extremely
low Junction-to-Ambient thermal resistance.
Applications
Synchronous Rectifier for DC/DC Converters
Telecom Secondary Side Rectification
High End Server/Workstation
Pin 1
S
S
S
D
5
4
G
G
D
6
3
S
D
D
D
D
D
D
7
8
2
1
S
S
Top
Power 56
Bottom
MOSFET Maximum Ratings T A = 25°C unless otherwise noted
Symbol
V DS
V GS
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
T C = 25 °C
Ratings
30
±20
49
Units
V
V
I D
-Continuous (Silicon limited)
-Continuous
T C = 25 °C
T A = 25 °C
(Note 1a)
78
18
A
-Pulsed
200
E AS
dv/dt
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
(Note 3)
(Note 4)
72
1.3
mJ
V/ns
P D
Power Dissipation
Power Dissipation
T C = 25 °C
T A = 25 °C
(Note 1a)
60
3.3
W
T J , T STG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
R θ JC
R θ JC
R θ JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(Top Source)
(Bottom Drain)
(Note 1a)
5.7
2.1
38
R θ JA
R θ JA
R θ JA
R θ JA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
(Note 1b)
(Note 1i)
(Note 1j)
(Note 1k)
81
16
23
11
°C/W
Package Marking and Ordering Information
Device Marking
3016
Device
FDMS3016DC
Package
Dual Cool TM Power 56
Reel Size
13’’
Tape Width
12 mm
Quantity
3000 units
?2010 Fairchild Semiconductor Corporation
FDMS3016DC Rev.C1
1
www.fairchildsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| FDMS3500 | MOSFET N-CH 75V 9.2A POWER56 |
| FDMS3572 | MOSFET N-CH 80V 8.8A POWER56 |
| FDMS3600S | MOSFET N-CH 25V 15A 8-PQFN |
| FDMS3602S | MOSFET N-CH 25V DUAL POWER56 |
| FDMS3604AS | MOSFET N-CH 30V DUAL 8-PQFN |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDMS3500 | 功能描述:MOSFET 75V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMS3572 | 功能描述:MOSFET 80V N-Ch UltraFET PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMS3572_07 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel UltraFET Trench㈢ MOSFET 80V, 22A, 16.5mз |
| FDMS3600S | 功能描述:MOSFET 25V Dual N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMS3602S | 功能描述:MOSFET 25V Dual N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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