参数资料
型号: FDMS3600S
厂商: Fairchild Semiconductor
文件页数: 1/15页
文件大小: 0K
描述: MOSFET N-CH 25V 15A 8-PQFN
标准包装: 1
系列: PowerTrench®
FET 型: 2 N 沟道(非对称桥)
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 25V
电流 - 连续漏极(Id) @ 25° C: 15A
开态Rds(最大)@ Id, Vgs @ 25° C: 5.6 毫欧 @ 15A,10V
Id 时的 Vgs(th)(最大): 2.7V @ 250µA
闸电荷(Qg) @ Vgs: 27nC @ 10V
输入电容 (Ciss) @ Vds: 1680pF @ 13V
功率 - 最大: 1W
安装类型: 表面贴装
封装/外壳: 8-PowerTDFN
供应商设备封装: Power56
包装: 标准包装
其它名称: FDMS3600SFSDKR
FDMS3600S
PowerTrench ? Power Stage
25 V Asymmetric Dual N-Channel MOSFET
Features
Q1: N-Channel
Max r DS(on) = 5.6 m Ω at V GS = 10 V, I D = 15 A
Max r DS(on) = 8.1 m Ω at V GS = 4.5 V, I D = 14 A
Q2: N-Channel
Max r DS(on) = 1.6 m Ω at V GS = 10 V, I D = 30 A
Max r DS(on) = 2.4 m Ω at V GS = 4.5 V, I D = 25 A
Low inductance packaging shortens rise/fall times, resulting in
lower switching losses
MOSFET integration enables optimum layout for lower circuit
inductance and reduced switch node ringing
RoHS Compliant
August 2011
General Description
This device includes two specialized N-Channel MOSFETs in a
dual PQFN package. The switch node has been internally
connected to enable easy placement and routing of synchronous
buck converters. The control MOSFET (Q1) and synchronous
SyncFET (Q2) have been designed to provide optimal power
efficiency.
Applications
Computing
Communications
General Purpose Point of Load
Notebook VCORE
Server
D1
Pin 1
G1
D1
D1
D1
S2
5
Q2
4 D1
PHASE
(S1/D2)
S2
S2
6
7
PHASE
3 D1
2 D1
G2
S2
S2
S2
G2
8
Q1
1 G1
Top
Power 56
Bottom
MOSFET Maximum Ratings T A = 25 °C unless otherwise noted
Symbol
V DS
Drain to Source Voltage
Parameter
Q1
25
Q2
25
Units
V
V GS
I D
Gate to Source Voltage
Drain Current
-Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
(Note 3)
T C = 25 °C
T C = 25 °C
T A = 25 °C
±20
30
65
15 1a
±20
40
155
30 1b
V
A
-Pulsed
40
100
E AS
Single Pulse Avalanche Energy
50 4
200 5
mJ
P D
Power Dissipation for Single Operation
Power Dissipation for Single Operation
T A = 25 °C
T A = 25 °C
2.2 1a
1.0 1c
2.5 1b
1.0 1d
W
T J , T STG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
R θ JA
Thermal Resistance, Junction to Ambient
57 1a
50 1b
R θ JA
R θ JC
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
125 1c
3.5
120 1d
2
°C/W
Package Marking and Ordering Information
Device Marking
22OA
N9OC
Device
FDMS3600S
Package
Power 56
Reel Size
13 ”
Tape Width
12 mm
Quantity
3000 units
?2011 Fairchild Semiconductor Corporation
FDMS3600S Rev.C3
1
www.fairchildsemi.com
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FDMS3602S MOSFET N-CH 25V DUAL POWER56
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FDMS3606AS MOSFET N-CH 30V DUAL POWER56
FDMS3615S MOSFET N-CH 25V DUAL 8-PQFN
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