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| 型号： | FDMS3600S |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 3/15页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 25V 15A 8-PQFN |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | 2 N 沟道（非对称桥） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 25V |
| 电流 - 连续漏极(Id) @ 25° C： | 15A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 5.6 毫欧 @ 15A，10V |
| Id 时的 Vgs(th)（最大）： | 2.7V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 27nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1680pF @ 13V |
| 功率 - 最大： | 1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-PowerTDFN |
| 供应商设备封装： | Power56 |
| 包装： | 标准包装 |
| 其它名称： | FDMS3600SFSDKR |
Electrical Characteristics T J = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Type
Min
Typ
Max
Units
Drain-Source Diode Characteristics
V SD
t rr
Q rr
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0 V, I S = 15 A
V GS = 0 V, I S = 30 A
Q1
I F = 15 A, di/dt = 100 A/ μ s
Q2
I F = 30 A, di/dt = 300 A/ μ s
(Note 2)
(Note 2)
Q1
Q2
Q1
Q2
Q1
Q2
0.8
0.8
21
32
6.6
36
1.2
1.2
34
51
13
58
V
ns
nC
Notes:
1: R θ JA is determined with the device mounted on a 1 in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R θ JC is guaranteed by design while R θ CA is determined
by the user's board design.
a. 57 °C/W when mounted on
a 1 in 2 pad of 2 oz copper
c. 125 °C/W when mounted on a
minimum pad of 2 oz copper
b. 50 °C/W when mounted on
a 1 in 2 pad of 2 oz copper
d. 120 °C/W when mounted on a
minimum pad of 2 oz copper
2: Pulse Test: Pulse Width < 300 μ s, Duty cycle < 2.0%.
3: As an N-ch device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied.
4: E AS of 50 mJ is based on starting T J = 25 o C; N-ch: L = 1 mH, I AS = 10 A, V DD = 23 V, V GS = 10 V. 100% test at L=0.3 mH, I AS = 15 A.
5: E AS of 200 mJ is based on starting T J = 25 o C; N-ch: L = 1 mH, I AS = 20 A, V DD = 23 V, V GS = 10 V. 100% test at L=0.3 mH, I AS = 30 A.
?2011 Fairchild Semiconductor Corporation
FDMS3600S Rev.C3
3
www.fairchildsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| FDMS3602S | MOSFET N-CH 25V DUAL POWER56 |
| FDMS3604AS | MOSFET N-CH 30V DUAL 8-PQFN |
| FDMS3606AS | MOSFET N-CH 30V DUAL POWER56 |
| FDMS3615S | MOSFET N-CH 25V DUAL 8-PQFN |
| FDMS3620S | MOSFET N-CH 25V DUAL 8-PQFN |
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| FDMS3615S | 功能描述:MOSFET DUAL N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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