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参数资料
| 型号： | FDMS3606AS |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/15页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V DUAL POWER56 |
| 标准包装： | 3,000 |
| 系列： | PowerTrench® |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 13A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 8 毫欧 @ 13A，10V |
| Id 时的 Vgs(th)（最大）： | 2.7V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 29nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1695pF @ 15V |
| 功率 - 最大： | 2.2W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-PowerTDFN |
| 供应商设备封装： | Power56 |
| 包装： | 带卷 (TR) |
September 2011
FDMS3606AS
PowerTrench ? Power Stage
30 V Asymmetric Dual N-Channel MOSFET
Features
Q1: N-Channel
Max r DS(on) = 8 m Ω at V GS = 10 V, I D = 13 A
Max r DS(on) = 11 m Ω at V GS = 4.5 V, I D = 11 A
Q2: N-Channel
Max r DS(on) = 1.9 m Ω at V GS = 10 V, I D = 27 A
Max r DS(on) = 2.8 m Ω at V GS = 4.5 V, I D = 23 A
Low inductance packaging shortens rise/fall times, resulting in
lower switching losses
MOSFET integration enables optimum layout for lower circuit
inductance and reduced switch node ringing
RoHS Compliant
General Description
This device includes two specialized N-Channel MOSFETs in a
dual PQFN package. The switch node has been internally
connected to enable easy placement and routing of synchronous
buck converters. The control MOSFET (Q1) and synchronous
SyncFET (Q2) have been designed to provide optimal power
efficiency.
Applications
Computing
Communications
General Purpose Point of Load
Notebook VCORE
Sever
D1
PHASE
(S1/D2)
G1
D1
D1
D1
S2
S2
5
6
Q2
PHASE
4 D1
3 D1
S2
7
2 D1
G2
S2
S2
S2
G2
8
Q1
1 G1
Top
Power 56
Bottom
MOSFET Maximum Ratings T A = 25 °C unless otherwise noted
Symbol
V DS
Drain to Source Voltage
Parameter
Q1
30
Q2
30
Units
V
V GS
I D
Gate to Source Voltage
Drain Current
-Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
(Note 3)
T C = 25 °C
T C = 25 °C
T A = 25 °C
±20
30
60
13 1a
±20
40
148
27 1b
V
A
-Pulsed
40
100
E AS
Single Pulse Avalanche Energy
40 4
162 5
mJ
P D
Power Dissipation for Single Operation
Power Dissipation for Single Operation
T A = 25 °C
T A = 25 °C
2.2 1a
1.0 1c
2.5 1b
1.0 1d
W
T J , T STG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
R θ JA
Thermal Resistance, Junction to Ambient
57 1a
50 1b
125
R θ JA
R θ JC
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
1c
3.5
120 1d
2
°C/W
Package Marking and Ordering Information
Device Marking
22CA
N9CC
Device
FDMS3606AS
Package
Power 56
Reel Size
13 ”
Tape Width
12 mm
Quantity
3000 units
?2011 Fairchild Semiconductor Corporation
FDMS3606AS Rev.C4
1
www.fairchildsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| FDMS3615S | MOSFET N-CH 25V DUAL 8-PQFN |
| FDMS3620S | MOSFET N-CH 25V DUAL 8-PQFN |
| FDMS3624S | MOSFET N-CH 25V DUAL 8-PQFN |
| FDMS3626S | MOSFET N-CH 25V DUAL 8-PQFN |
| FDMS3660S | MOSFET N-CH 30V DUAL 8-PQFN |
相关代理商/技术参数 |
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| FDMS36101L_F085 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N-Channel Power Trench MOSFET 100V, 38A, 26m |
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| FDMS3616S | 功能描述:MOSFET 25V Asymmetric 2xNCh MOSFET PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMS3620S | 功能描述:MOSFET 25V Asymtrc Dual NCh MOSFET PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMS3622S | 功能描述:MOSFET PowerStage 25V Dual N-Channel MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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