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参数资料
| 型号： | FDMS3615S |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/15页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 25V DUAL 8-PQFN |
| 标准包装： | 3,000 |
| 系列： | PowerTrench® |
| FET 型： | 2 N 沟道（双）非对称型 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 25V |
| 电流 - 连续漏极(Id) @ 25° C： | 16A，18A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 5.8 毫欧 @ 16A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 27nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1765pF @ 13V |
| 功率 - 最大： | 1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-PowerTDFN |
| 供应商设备封装： | Power56 |
| 包装： | 带卷 (TR) |
August 2011
FDMS3615S
PowerTrench ? Power Stage
25V Asymmetric Dual N-Channel MOSFET
Features
Q1: N-Channel
Max r DS(on) = 5.8 m Ω at V GS = 10 V, I D = 16 A
Max r DS(on) = 8.3 m Ω at V GS = 4.5 V, I D = 13 A
Q2: N-Channel
Max r DS(on) = 3.4 m Ω at V GS = 10 V, I D = 18 A
Max r DS(on) = 4.6 m Ω at V GS = 4.5 V, I D = 15 A
Low inductance packaging shortens rise/fall times, resulting in
lower switching losses
MOSFET integration enables optimum layout for lower circuit
inductance and reduced switch node ringing
RoHS Compliant
General Description
This device includes two specialized N-Channel MOSFETs in a
dual PQFN package. The switch node has been internally
connected to enable easy placement and routing of synchronous
buck converters. The control MOSFET (Q1) and synchronous
SyncFET (Q2) have been designed to provide optimal power
efficiency.
Applications
Computing
Communications
General Purpose Point of Load
Notebook VCORE
Server
D1
Pin 1
G1
D1
D1
D1
S2
5
Q2
4 D1
PHASE
(S1/D2)
S2
S2
6
7
PHASE
3 D1
2 D1
G2
S2
S2
S2
G2
8
Q1
1 G1
Top
Power 56
Bottom
MOSFET Maximum Ratings T A = 25°C unless otherwise noted
Symbol
V DS
Drain to Source Voltage
Parameter
Q1
25
Q2
25
Units
V
V GS
I D
Gate to Source Voltage
Drain Current
-Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
(Note 3)
T C = 25 °C
T C = 25 °C
T A = 25 °C
±20
23
89
16 1a
±20
18
88
18 1b
V
A
-Pulsed
45
36
E AS
Single Pulse Avalanche Energy
38 4
98 5
mJ
P D
Power Dissipation for Single Operation
Power Dissipation for Single Operation
T A = 25°C
T A = 25°C
2.3 1a
1.0 1c
2.3 1b
1.0 1d
W
T J , T STG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
R θ JA
R θ JA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
55 1a
125 1c
55 1b
125 1d
°C/W
Package Marking and Ordering Information
Device Marking
Y8OA
K10OC
Device
FDMS3615S
Package
Power 56
Reel Size
13 ”
Tape Width
12 mm
Quantity
3000 units
?2011 Fairchild Semiconductor Corporation
FDMS3615S Rev.C6
1
www.fairchildsemi.com
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