- 您现在的位置：买卖IC网 > Datasheet目录421 > FDMS3624S (Fairchild Semiconductor)MOSFET N-CH 25V DUAL 8-PQFN Datasheet资料下载
参数资料
| 型号： | FDMS3624S |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/12页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 25V DUAL 8-PQFN |
| 标准包装： | 3,000 |
| 系列： | PowerTrench® |
| FET 型： | 2 N 沟道（双）非对称型 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 25V |
| 电流 - 连续漏极(Id) @ 25° C： | 17.5A，30A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 5 毫欧 @ 17.5A，10V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 26nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1570pF @ 13V |
| 功率 - 最大： | 1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-PowerTDFN |
| 供应商设备封装： | Power56 |
| 包装： | 带卷 (TR) |
December 2011
FDMS3624S
PowerTrench ? Power Stage
25V Asymmetric Dual N-Channel MOSFET
Features
Q1: N-Channel
Max r DS(on) = 5.0 m Ω at V GS = 10 V, I D = 17.5 A
Max r DS(on) = 5.7 m Ω at V GS = 4.5 V, I D = 16 A
Q2: N-Channel
Max r DS(on) = 1.8 m Ω at V GS = 10 V, I D = 30 A
Max r DS(on) = 2.2 m Ω at V GS = 4.5 V, I D = 27 A
Low inductance packaging shortens rise/fall times, resulting in
lower switching losses
MOSFET integration enables optimum layout for lower circuit
inductance and reduced switch node ringing
RoHS Compliant
General Description
This device includes two specialized N-Channel MOSFETs in a
dual PQFN package. The switch node has been internally
connected to enable easy placement and routing of synchronous
buck converters. The control MOSFET (Q1) and synchronous
SyncFET (Q2) have been designed to provide optimal power
efficiency.
Applications
Computing
Communications
General Purpose Point of Load
Notebook VCORE
Pin 1
G1
D1
D1
D1
Pin 1
G2
S2
S2
PHASE
(S1/D2)
S2
D1
Top
Power 56
Bottom
MOSFET Maximum Ratings T A = 25 °C unless otherwise noted
Symbol
V DS
Drain to Source Voltage
Parameter
Q1
25
Q2
25
Units
V
V GS
I D
Gate to Source Voltage
Drain Current
-Continuous (Package limited)
-Continuous
(Note 4)
T C = 25 °C
T A = 25 °C
±12
30
17.5 1a
±12
60
30 1b
V
A
-Pulsed
70
120
E AS
P D
Single Pulse Avalanche Energy
Power Dissipation for Single Operation
Power Dissipation for Single Operation
(Note 3)
T A = 25 °C
T A = 25 °C
29
2.2 1a
1.0 1c
86
2.5 1b
1.0 1d
mJ
W
T J , T STG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
R θ JA
Thermal Resistance, Junction to Ambient
57 1a
50 1b
125
R θ JA
R θ JC
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
1c
3.0
120 1d
2.2
°C/W
Package Marking and Ordering Information
Device Marking
08OD
07OD
Device
FDMS3624S
Package
Power 56
Reel Size
13 ”
Tape Width
12 mm
Quantity
3000 units
?2011 Fairchild Semiconductor Corporation
FDMS3624S Rev.C2
1
www.fairchildsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| FDMS3626S | MOSFET N-CH 25V DUAL 8-PQFN |
| FDMS3660S | MOSFET N-CH 30V DUAL 8-PQFN |
| FDMS3662 | MOSFET N-CH 100V 8.9A POWER56 |
| FDMS3664S | MOSFET N-CH 30V DUAL 8-PQFN |
| FDMS3668S | MOSFET N-CH 30V DUAL 8-PQFN |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDMS3626S | 功能描述:MOSFET 25V Dual N-Channel MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMS3660AS | 制造商:Fairchild Semiconductor Corporation 功能描述:PT7 30/20 & PT8 N S 30/12V IN PQFN56 DUAL - Tape and Reel 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N-CH DUAL 30V 8QFN 制造商:Fairchild Semiconductor Corporation 功能描述:TAPE REEL / PT7 30/20 & PT8 N S 30/12V in PQFN56 Dual |
| FDMS3660S | 功能描述:MOSFET PowerStage Dual N-Ch PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMS3660S_F121 | 制造商:Fairchild Semiconductor Corporation 功能描述:POWERTRENCH POWERSTAGE ASYMMETRIC DUAL N-CHANNEL MOSFET - Tape and Reel 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N-CH 30V DUAL 8-PQFN 制造商:Fairchild Semiconductor Corporation 功能描述:TAPE REEL / PowerTrench PowerStage Asymmetric Dual N-Channel MOSFET |
| FDMS3662 | 功能描述:MOSFET 100V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。