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参数资料
| 型号： | FDMS3624S |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 4/12页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 25V DUAL 8-PQFN |
| 标准包装： | 3,000 |
| 系列： | PowerTrench® |
| FET 型： | 2 N 沟道（双）非对称型 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 25V |
| 电流 - 连续漏极(Id) @ 25° C： | 17.5A，30A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 5 毫欧 @ 17.5A，10V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 26nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1570pF @ 13V |
| 功率 - 最大： | 1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-PowerTDFN |
| 供应商设备封装： | Power56 |
| 包装： | 带卷 (TR) |
Typical Characteristics (Q1 N-Channel) T J = 25°C unless otherwise noted
70
60
V GS = 10 V
V GS = 4.5 V
3.0
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
2.5
50
V GS = 2.5 V
40
V GS = 3.5 V
2.0
30
V GS = 3 V
V GS = 2.5 V
1.5
V GS = 3 V
20
10
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
1.0
V GS = 3.5 V V GS = 4.5 V V GS = 10 V
0
0.0
0.3
0.6
0.9
1.2
1.5
0.5
0
10
20
30
40
50
60
70
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On Region Characteristics
I D , DRAIN CURRENT (A)
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.8
1.6
I D = 17.5 A
V GS = 10 V
20
16
I D = 17.5 A
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
1.4
12
1.2
1.0
0.8
8
4
T J = 125 o C
T J = 25 o C
0.6
-75
-50
-25 0 25 50 75 100 125 150
0
2
3
4
5
6
7
8
9
10
T J , JUNCTION TEMPERATURE ( o C )
Figure 3. Normalized On Resistance
vs Junction Temperature
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
70
60
50
40
30
20
10
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
V DS = 5 V
T J = 150 o C
T J = 25 o C
T J = -55 o C
70
10
1
0.1
0.01
V GS = 0 V
T J = 150 o C
T J = 25 o C
T J = -55 o C
0
0.5
1.0
1.5
2.0
2.5
3.0
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
V SD , BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
?2011 Fairchild Semiconductor Corporation
FDMS3624S Rev.C2
4
www.fairchildsemi.com
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PDF描述 |
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相关代理商/技术参数 |
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| FDMS3626S | 功能描述:MOSFET 25V Dual N-Channel MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMS3660AS | 制造商:Fairchild Semiconductor Corporation 功能描述:PT7 30/20 & PT8 N S 30/12V IN PQFN56 DUAL - Tape and Reel 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N-CH DUAL 30V 8QFN 制造商:Fairchild Semiconductor Corporation 功能描述:TAPE REEL / PT7 30/20 & PT8 N S 30/12V in PQFN56 Dual |
| FDMS3660S | 功能描述:MOSFET PowerStage Dual N-Ch PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMS3660S_F121 | 制造商:Fairchild Semiconductor Corporation 功能描述:POWERTRENCH POWERSTAGE ASYMMETRIC DUAL N-CHANNEL MOSFET - Tape and Reel 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N-CH 30V DUAL 8-PQFN 制造商:Fairchild Semiconductor Corporation 功能描述:TAPE REEL / PowerTrench PowerStage Asymmetric Dual N-Channel MOSFET |
| FDMS3662 | 功能描述:MOSFET 100V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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