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参数资料
| 型号： | FDMS3016DC |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 18A 8-PQFN |
| 标准包装： | 3,000 |
| 系列： | Dual Cool™, PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 18A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 6 毫欧 @ 12A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 23nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1385pF @ 15V |
| 功率 - 最大： | 3.3W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-PowerTDFN |
| 供应商设备封装： | Power56 |
| 包装： | 带卷 (TR) |
Electrical Characteristics T J = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV DSS
Δ BV DS S
Δ T J
I DSS
I GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I D = 250 μ A, V GS = 0 V
I D = 250 μ A, referenced to 25 °C
V DS = 24 V, V GS = 0 V
V GS = ±20 V, V DS = 0 V
30
17
1
±100
V
mV/°C
μ A
nA
On Characteristics
V GS(th)
Δ V GS(th)
Δ T J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V GS = V DS , I D = 250 μ A
I D = 250 μ A, referenced to 25 °C
1.0
1.9
-6
3.0
V
mV/°C
V GS = 10 V, I D = 12 A
5.0
6.0
r DS(on)
Static Drain to Source On Resistance
V GS = 4.5 V, I D = 10 A
7.0
9.0
m Ω
V GS = 10 V, I D = 12 A, T J = 125 °C
7.5
9.4
g FS
Forward Transconductance
V DS = 5 V, I D = 12 A
44
S
Dynamic Characteristics
C iss
C oss
C rss
R g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V DS = 15 V, V GS = 0 V,
f = 1 MHz
1038
513
87
0.9
1385
685
135
pF
pF
pF
Ω
Switching Characteristics
t d(on)
Turn-On Delay Time
9
18
ns
t r
t d(off)
t f
Q g
Q g
Q gs
Q gd
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V DD = 15 V, I D = 12 A,
V GS = 10 V, R GEN = 6 Ω
V GS = 0 V to 10 V
V GS = 0 V to 4.5 V V DD = 15 V,
I D = 12 A
3
19
2
16
7.6
3
2.5
10
35
10
23
10.6
ns
ns
ns
nC
nC
nC
nC
Drain-Source Diode Characteristics
V SD
Source to Drain Diode Forward Voltage
V GS = 0 V, I S = 12 A
V GS = 0 V, I S = 1.9 A
(Note 2)
(Note 2)
0.82
0.73
1.3
1.2
V
t rr
Q rr
Reverse Recovery Time
Reverse Recovery Charge
I F = 12 A, di/dt = 100 A/ μ s
25
9
45
18
ns
nC
?2010 Fairchild Semiconductor Corporation
FDMS3016DC Rev.C1
2
www.fairchildsemi.com
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