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| 型号： | FDMS2572 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 150V 4.5A POWER56 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Design/Process Change Notification 16/May/2007 |
| 产品目录绘图： | Power56 Single |
| 标准包装： | 1 |
| 系列： | UltraFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 150V |
| 电流 - 连续漏极(Id) @ 25° C： | 4.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 47 毫欧 @ 4.5A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 43nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 2610pF @ 75V |
| 功率 - 最大： | 2.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-MLP，Power56 |
| 供应商设备封装： | Power56 |
| 包装： | 标准包装 |
| 产品目录页面： | 1609 (CN2011-ZH PDF) |
| 其它名称： | FDMS2572DKR |
Electrical Characteristics T J = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV DSS
Δ BV DS S
Δ T J
I DSS
I GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I D = 250 μ A, V GS = 0V
I D = 250 μ A, referenced to 25°C
V DS = 120V, V GS = 0V
V GS = ±20V, V DS = 0V
150
180
1
±100
V
mV/°C
μ A
nA
On Characteristics (Note 2)
V GS(th)
Δ V GS(th )
Δ T J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V GS = V DS , I D = 250 μ A
I D = 250 μ A, referenced to 25°C
2
3
-9.8
4
V
mV/°C
V GS = 10V, I D = 4.5A
36
47
r DS(on)
Drain to Source On Resistance
V GS = 6V,
I D = 4.5A
39
53
m Ω
V GS = 10V, I D = 4.5A, T J = 125°C
69
103
g FS
Forward Transconductance
V DS = 10V, I D = 4.5A
14
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = 75V, V GS = 0V,
f = 1MHz
1960
130
30
2610
175
45
pF
pF
pF
R g
Gate Resistance
f = 1MHz
0.1
1.3
2.6
Ω
Switching Characteristics
t d(on)
t r
t d(off)
t f
Q g(TOT)
Q gs
Q gd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V DD = 75V, I D = 1.0A
V GS = 10V, R GEN = 6 Ω
V GS = 0V to 10V V DD = 75V
I D = 4.5A
11
8
38
31
31
9
7
20
16
61
50
43
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics
V SD
Source to Drain Diode Forward Voltage
V GS = 0V, I S = 2.2A
(Note 2)
0.7
1.0
V
t rr
Q rr
Reverse Recovery Time
Reverse Recovery Charge
I F = 4.5A, di/dt = 100A/ μ s
67
130
101
195
ns
nC
Notes:
1: R θ JA is determined with the device mounted on a 1in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R θ JC is guaranteed by design while R θ CA is determined by
the user's board design.
a.50°C/W when mounted on
a 1 in 2 pad of 2 oz copper
2: Pulse Test: Pulse Width < 300 μ s, Duty cycle < 2.0%.
3: E AS of 150 mJ is based on starting T J = 25 °C, L = 3 mH, I AS = 10 A, VDD = 150 V, VGS = 10 V.
b. 125°C/W when mounted on a
minimum pad of 2 oz copper
FDMS2572 Rev.C4
2
www.fairchildsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDMS2572 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDMS2572 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N CH 150V 4.5A POWER 56 |
| FDMS2572_07 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel UltraFET Trench㈢ MOSFET 150V, 27A, 47mз |
| FDMS2672 | 功能描述:MOSFET 200V N-Ch UltraFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMS2672_12 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel UltraFET Trench MOSFET 200V, 20A, 77m |
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