参数资料
型号: FDMS2572
厂商: Fairchild Semiconductor
文件页数: 3/7页
文件大小: 0K
描述: MOSFET N-CH 150V 4.5A POWER56
产品培训模块: High Voltage Switches for Power Processing
产品变化通告: Design/Process Change Notification 16/May/2007
产品目录绘图: Power56 Single
标准包装: 1
系列: UltraFET™
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 150V
电流 - 连续漏极(Id) @ 25° C: 4.5A
开态Rds(最大)@ Id, Vgs @ 25° C: 47 毫欧 @ 4.5A,10V
Id 时的 Vgs(th)(最大): 4V @ 250µA
闸电荷(Qg) @ Vgs: 43nC @ 10V
输入电容 (Ciss) @ Vds: 2610pF @ 75V
功率 - 最大: 2.5W
安装类型: 表面贴装
封装/外壳: 8-MLP,Power56
供应商设备封装: Power56
包装: 标准包装
产品目录页面: 1609 (CN2011-ZH PDF)
其它名称: FDMS2572DKR
Typical Characteristics T J = 25°C unless otherwise noted
40
1.8
35
30
V GS = 10V
V GS = 6V
PULSE DURATION = 300 μ s
DUTY CYCLE = 2.0%MAX
1.6
V GS =4.5V
PULSE DURATION = 300 μ s
DUTY CYCLE = 2.0%MAX
V GS =5V V GS =5.5V
25
V GS = 5.5V
1.4
20
15
10
5
V GS = 5V
V GS = 4.5V
1.2
1.0
V GS = 6V
V GS = 10V
0
0
1 2 3 4
5
0.8
0
8 16 24
32
40
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
2.4
I D , DRAIN CURRENT(A)
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
110
2.2
2.0
1.8
1.6
1.4
1.2
I D = 4.5A
V GS = 10V
100
90
80
70
I D = 4.5A
PULSE DURATION =300 μ s
DUTY CYCLE = 2.0%MAX
T J = 150 o C
1.0
0.8
60
50
0.6
0.4
40
T J = 25 o C
0.2
-75
-50
-25 0 25 50 75 100 125 150
30
3
4 5 6 7 8 9
10
T J , JUNCTION TEMPERATURE ( o C )
Figure 3. Normalized On - Resistance
vs Junction Temperature
60
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
60
50
40
30
20
PULSE DURATION = 300 μ s
DUTY CYCLE = 2.0%MAX
T J = 125 o C
10
1
0.1
0.01
V GS = 0V
T J = 125 o C
T J = 25 o C
T J = 25 o C
10
T J =-55 o C
1E-3
T J = -55 o C
0
1
2
3
4
5
6
1E-4
0.0
0.2 0.4 0.6 0.8 1.0
1.2
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
V SD , BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
FDMS2572 Rev.C4
3
www.fairchildsemi.com
相关PDF资料
PDF描述
FDMS2672 MOSFET N-CH 200V 3.7A POWER56
FDMS2734 MOSFET N-CH 250V 2.8A POWER56
FDMS3006SDC MOSFET N-CH 30V 34A 8-PQFN
FDMS3008SDC MOSFET N-CH 30V 29A 8-PQFN
FDMS3016DC MOSFET N-CH 30V 18A 8-PQFN
相关代理商/技术参数
参数描述
FDMS2572 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET
FDMS2572 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N CH 150V 4.5A POWER 56
FDMS2572_07 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel UltraFET Trench㈢ MOSFET 150V, 27A, 47mз
FDMS2672 功能描述:MOSFET 200V N-Ch UltraFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDMS2672_12 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel UltraFET Trench MOSFET 200V, 20A, 77m