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参数资料
| 型号： | FDMS039N08B |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 80V 19.4A POWER56 |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 80V |
| 电流 - 连续漏极(Id) @ 25° C： | 19.4A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 3.9 毫欧 @ 50A，10V |
| Id 时的 Vgs(th)（最大）： | 4.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 100nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 7600pF @ 40V |
| 功率 - 最大： | 2.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-PowerTDFN |
| 供应商设备封装： | Power56 |
| 包装： | 标准包装 |
| 其它名称： | FDMS039N08BDKR |
Package Marking and Ordering Information
Device Marking
FDMS039N08B
Device
FDMS039N08B
Package
Power 56
Reel Size
13 ”
Tape Width
12 mm
Quantity
3000 units
Electrical Characteristics T C = 25 o C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
I D = 250 μ A, Referenced to 25 C
BV DSS
Δ BV DSS
/ Δ T J
I DSS
I GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
I D = 250 μ A, V GS = 0 V
V DS = 64 V, V GS = 0 V
V GS = ±20 V, V DS = 0 V
o
80
-
-
-
-
0.04
-
-
-
-
1
±100
V
V/ o C
μ A
nA
On Characteristics
V GS(th)
R DS(on)
g FS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
V GS = V DS , I D = 250 μ A
V GS = 10 V, I D = 50 A
V DS = 10 V, I D = 50 A
2.5
-
-
-
3.2
100
4.5
3.9
-
V
m Ω
S
Dynamic Characteristics
C iss
C oss
C rss
C oss (er)
Q g(tot)
Q gs
Q gs2
Q gd
ESR
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Engry Releted Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
Equivalent Series Resistance
V DS = 40 V, V GS = 0 V
f = 1 MHz
V DS = 40 V, V GS = 0 V
V DS = 40 V, I D = 50 A
V GS = 0 V to 10 V
f = 1 MHz
(Note 4)
-
-
-
-
-
-
-
-
-
5715
881
15
1646
77
34
13
16
1.2
7600
1170
-
-
100
-
-
-
-
pF
pF
pF
pF
nC
nC
nC
nC
Ω
Switching Characteristics
t d(on)
t r
t d(off)
t f
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V DD = 40 V, I D = 50 A
V GS = 10 V, R G = 4.7 Ω
(Note 4)
-
-
-
-
42
25
48
17
94
60
106
44
ns
ns
ns
ns
Drain-Source Diode Characteristics
I S
I SM
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
-
-
-
-
100
400
A
A
V SD
t rr
Q rr
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0 V, I SD = 50 A
V GS = 0 V, I SD = 50 A, V DD = 40 V
dI F /dt = 100 A/ μ s
-
-
-
-
68
80
1.3
-
-
V
ns
nC
Notes:
1.R θ JA is determined with the device mounted on a 1in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R θ JC is guaranteed by design while R θ CA is determined by
the user's board design.
a. 50 °C/W when mounted on a
1 in 2 pad of 2 oz copper.
2. Repetitive rating: pulse-width limited by maximum junction temperature.
3. L = 0.3 mH, I AS = 40 A, starting T J = 25 ° C.
4. Essentially independent of operating temperature typical characteristics.
b. 125 °C/W when mounted on a
minimum pad of 2 oz copper.
?2011 Fairchild Semiconductor Corporation
FDMS039N08B Rev. C4
2
www.fairchildsemi.com
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