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| 型号： | FDMS2510SDC |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 25V 28A POWER56 |
| 标准包装： | 1 |
| 系列： | Dual Cool™, PowerTrench®, SyncFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 25V |
| 电流 - 连续漏极(Id) @ 25° C： | 28A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 2.9 毫欧 @ 23A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 1mA |
| 闸电荷(Qg) @ Vgs： | 45nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 2780pF @ 13V |
| 功率 - 最大： | 3.3W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-PQFN，Power56 |
| 供应商设备封装： | Power56 |
| 包装： | 标准包装 |
| 其它名称： | FDMS2510SDCDKR |
FDMS2510SDC
N-Channel Dual Cool TM PowerTrench ? SyncFET TM
25 V, 49 A, 2.9 m Ω
July 2013
Features
General Description
Dual Cool
TM
Top Side Cooling PQFN package
This N-Channel MOSFET is
produced using Fairchild
Max r DS(on) = 2.9 m Ω at V GS = 10 V, I D = 23 A
Max r DS(on) = 4.2 m Ω at V GS = 4.5 V, I D = 18 A
High performance technology for extremely low r DS(on)
SyncFET Schottky Body Diode
RoHS Compliant
Semiconductor’s advanced PowerTrench ? process.
Advancements in both silicon and Dual Cool TM package
technologies have been combined to offer the lowest r DS(on)
while maintaining excellent switching performance by extremely
low Junction-to-Ambient thermal resistance. This device has the
added benefit of an efficient monolithic Schottky body diode.
Applications
Synchronous Rectifier for DC/DC Converters
Telecom Secondary Side Rectification
High End Server/Workstation Vcore Low Side
Pin 1
S
S
S
G
D
D
5
6
4 G
S
3
D
D
D
D
D
D
7
8
2 S
1 S
Top
Power 56
Bottom
MOSFET Maximum Ratings T A = 25°C unless otherwise noted
Symbol
V DS
Drain to Source Voltage
Parameter
Ratings
25
Units
V
V GS
Gate to Source Voltage
Drain Current
-Continuous (Package limited)
T C = 25 °C
(Note 4)
±20
49
V
I D
-Continuous (Silicon limited)
-Continuous
T C = 25 °C
T A = 25 °C
(Note 1a)
117
28
A
-Pulsed
200
E AS
dv/dt
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
(Note 3)
(Note 5)
84
2.5
mJ
V/ns
P D
Power Dissipation
Power Dissipation
T C = 25 °C
T A = 25 °C
(Note 1a)
60
3.3
W
T J , T STG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
R θ JC
R θ JC
R θ JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(Top Source)
(Bottom Drain)
(Note 1a)
4.4
2.1
38
R θ JA
R θ JA
R θ JA
R θ JA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
(Note 1b)
(Note 1i)
(Note 1j)
(Note 1k)
81
16
23
11
°C/W
Package Marking and Ordering Information
Device Marking
2510S
Device
FDMS2510SDC
Package
Dual Cool TM Power 56
Reel Size
13’’
Tape Width
12 mm
Quantity
3000 units
?2010 Fairchild Semiconductor Corporation
FDMS2510SDC Rev.C3
1
www.fairchildsemi.com
相关PDF资料 |
PDF描述 |
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| FDMS3006SDC | MOSFET N-CH 30V 34A 8-PQFN |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDMS2572 | 功能描述:MOSFET LOW_VOLTAGE RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMS2572 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDMS2572 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N CH 150V 4.5A POWER 56 |
| FDMS2572_07 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel UltraFET Trench㈢ MOSFET 150V, 27A, 47mз |
| FDMS2672 | 功能描述:MOSFET 200V N-Ch UltraFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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