参数资料
型号: FDMQ8403
厂商: Fairchild Semiconductor
文件页数: 1/6页
文件大小: 0K
描述: MOSFET N-CH 100V 6A 12-MLP
标准包装: 1
系列: GreenBridge™ PowerTrench®
FET 型: 4 N 通道(半桥)
FET 特点: 标准
漏极至源极电压(Vdss): 100V
电流 - 连续漏极(Id) @ 25° C: 3.1A
开态Rds(最大)@ Id, Vgs @ 25° C: 110 毫欧 @ 3A,10V
Id 时的 Vgs(th)(最大): 4V @ 250µA
闸电荷(Qg) @ Vgs: 5nC @ 10V
输入电容 (Ciss) @ Vds: 215pF @ 15V
功率 - 最大: 1.9W
安装类型: 表面贴装
封装/外壳: 12-WFDFN 裸露焊盘
供应商设备封装: 12-MLP(5x4.5)
包装: 标准包装
其它名称: FDMQ8403DKR
July 2012
FDMQ8403
GreenBridge TM Series of High-Efficiency Bridge Rectifiers
N-Channel PowerTrench ? MOSFET
100 V, 6 A, 110 m Ω
Features
Max r DS(on) = 110 m Ω at V GS = 10 V, I D = 3 A
Max r DS(on) = 175 m Ω at V GS = 6 V, I D = 2.4 A
Substantial efficiency benefit in PD solutions
RoHS Compliant
Top
Bottom
General Description
This quad MOSFET solution provides ten-fold improvement in
power dissipation over diode bridge.
Application
High-Efficiency Bridge Rectifiers
Pin 1
S3
7
Q3
Q2
6
S2
G4
D1/D4
D3/S4
D1/D4
G1
D1/D4
S1/D2
S3
G3
8
9
5
4
S2
G2
G3
D3/
S1/
G2
D3/S4 10
Q4
Q1
3 S1/D2
S3
S4
D2
S2
S3
S2
D1/D4 11
12
G4
2
1
D1/D4
G1
MLP 4.5x5
MOSFET Maximum Ratings T A = 25 °C unless otherwise noted
Symbol
V DS
V GS
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
T C = 25 °C
Ratings
100
±20
6
Units
V
V
I D
-Continuous (Silicon limited)
-Continuous
T C = 25 °C
T A = 25 °C
(Note 1a)
9
3.1
A
-Pulsed
12
P D
Power Dissipation
Power Dissipation
T C = 25 °C
T A = 25 °C
(Note 1a)
17
1.9
W
T J , T STG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
R θ JA
R θ JA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
(Note 1a)
(Note 1b)
65
135
°C/W
Package Marking and Ordering Information
Device Marking
FDMQ8403
Device
FDMQ8403
Package
MLP 4.5x5
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
?2012 Fairchild Semiconductor Corporation
FDMQ8403 Rev.C2
1
www.fairchildsemi.com
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