- 您现在的位置：买卖IC网 > Datasheet目录421 > FDMQ8403 (Fairchild Semiconductor)MOSFET N-CH 100V 6A 12-MLP Datasheet资料下载
参数资料
| 型号： | FDMQ8403 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 100V 6A 12-MLP |
| 标准包装： | 1 |
| 系列： | GreenBridge™ PowerTrench® |
| FET 型： | 4 N 通道（半桥） |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 3.1A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 110 毫欧 @ 3A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 5nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 215pF @ 15V |
| 功率 - 最大： | 1.9W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 12-WFDFN 裸露焊盘 |
| 供应商设备封装： | 12-MLP（5x4.5） |
| 包装： | 标准包装 |
| 其它名称： | FDMQ8403DKR |
Electrical Characteristics T J = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV DSS
Δ BV DSS
Δ T J
I DSS
I GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I D = 250 μ A, V GS = 0 V
I D = 250 μ A, referenced to 25 °C
V DS = 80 V, V GS = 0 V
V GS = ±20 V, V DS = 0 V
100
72
1
±100
V
mV/°C
μ A
nA
On Characteristics
V GS(th)
Δ V GS(th)
Δ T J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V GS = V DS , I D = 250 μ A
I D = 250 μ A, referenced to 25 °C
2
2.8
-8
4
V
mV/°C
V GS = 10 V, I D = 3 A
85
110
r DS(on)
Static Drain to Source On Resistance
V GS = 6 V, I D = 2.4 A
115
175
m Ω
V GS = 10 V, I D = 3 A, T J = 125 °C
147
191
g FS
Forward Transconductance
V DS = 10 V, I D = 3 A
6
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = 50 V, V GS = 0 V,
f = 1 MHz
162
43
2.6
215
60
5
pF
pF
pF
Switching Characteristics
t d(on)
Turn-On Delay Time
4.1
10
ns
t r
t d(off)
t f
Q g
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
V DD = 50 V, I D = 3 A,
V GS = 10 V, R GEN = 6 Ω
V GS = 0 V to 10 V
1.2
7.2
1.8
3
10
15
10
5
ns
ns
ns
nC
Q g
Q gs
Total Gate Charge
Gate to Source Charge
V GS = 0 V to 5 V
V DD = 50 V,
I D = 3 A
1.7
0.9
3
nC
nC
Q gd
Gate to Drain “Miller” Charge
0.8
nC
Drain-Source Diode Characteristics
V SD
t rr
Q rr
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0 V, I S = 3 A
I F = 3 A, di/dt = 100 A/ μ s
(Note 2)
0.86
33
23
1.3
53
37
V
ns
nC
Notes :
1. R θ JA is determined with the device mounted on a 1in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R θ JC is guaranteed by design while R θ CA is determined by
the user's board design.
a. 65 °C/W when mounted on a 1 in 2
pad of 2 oz copper. the board
designed Q1+Q3 or Q2+Q4.
b. 135 °C/W when mounted on a
minimum pad of 2 oz copper.
the board designed Q1+Q3 or
Q2+Q4.
2. Pulse Test: Pulse Width < 300 μ s, Duty cycle < 2.0%.
?2012 Fairchild Semiconductor Corporation
FDMQ8403 Rev.C2
2
www.fairchildsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| FDMS015N04B | MOSFET N-CH 40V 31.3A 8-PQFN |
| FDMS0312S | MOSFET N-CH 30V 19A POWER56 |
| FDMS039N08B | MOSFET N-CH 80V 19.4A POWER56 |
| FDMS2504SDC | MOSFET N-CH 25V 42A POWER56 |
| FDMS2506SDC | MOSFET N-CH 25V 39A POWER56 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDMQ86530L | 功能描述:MOSFET 60V N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMQ86530L_13 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:GreenBridgeTM Series of High-Efficiency Bridge Rectifiers N-Channel PowerTrench MOSFET |
| FDMS015N04B | 功能描述:MOSFET NCh40V100A,1.5m ohms PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMS025C480-YW | 制造商:Thomas & Betts 功能描述:250W 480V HPS |
| FDMS0300S | 制造商:Fairchild Semiconductor Corporation 功能描述: |
发布紧急采购，3分钟左右您将得到回复。