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| 型号： | FDMQ8203 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/10页 |
| 文件大小： | 0K |
| 描述： | MOSFET N/P-CH 100V DUAL 12-MLP |
| 标准包装： | 3,000 |
| 系列： | GreenBridge™ PowerTrench® |
| FET 型： | 2 个 N 通道和 2 个 P 通道（H 桥式） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 100V，80V |
| 电流 - 连续漏极(Id) @ 25° C： | 3.4A，2.6A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 110 毫欧 @ 3A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 5nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 210pF @ 50V |
| 功率 - 最大： | 2.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 12-WDFN 裸露焊盘 |
| 供应商设备封装： | * |
| 包装： | 带卷 (TR) |
December 2011
FDMQ8203
GreenBridge TM Series of High-Efficiency Bridge Rectifiers
Dual N-Channel and Dual P-Channel PowerTrench ? MOSFET
N-Channel: 100 V, 6 A, 110 m Ω P-Channel: -80 V, -6 A, 190 m Ω
Features
Q1/Q4: N-Channel
Max r DS(on) = 110 m Ω at V GS = 10 V, I D = 3 A
Max r DS(on) = 175 m Ω at V GS = 6 V, I D = 2.4 A
Q2/Q3: P-Channel
Max r DS(on) = 190 m Ω at V GS = -10 V, I D = -2.3 A
Max r DS(on) = 235 m Ω at V GS = -4.5 V, I D = -2.1 A
Substantial efficiency benefit in PD solutions
RoHS Compliant
Top
Bottom
General Description
This quad mosfet solution provides ten-fold improvement in
power dissipation over diode bridge.
Application
High-Efficiency Bridge Rectifiers
Pin 1
S3
7
Q3 (Pch)
Q2 (Pch)
6 S2
G4
S4
S4
G3
S3
D3/
D4
D3/
D4
D1/
D2
D1/
D2
G1
S1
S1
G2
S2
S3 8
G3 9
S4 10
S4 11
Q4 (Nch)
Q1 (Nch )
5 S2
4 G2
3 S1
S1
2
S3
MLP 4.5x5
S2
G4 12
D3,D4 to backside
(isolated from D1,D2)
1 G1
D1,D2 to backside
MOSFET Maximum Ratings T A = 25 °C unless otherwise noted
Symbol
V DS
V GS
Drain to Source Voltage
Gate to Source Voltage
Parameter
Q1/Q4
100
±20
Q2/Q3
-80
±20
Units
V
V
Drain Current
-Continuous (Package limited)
T C = 25 °C
6
-6
I D
-Continuous (Silicon limited)
-Continuous
T C = 25 °C
T A = 25 °C
(Note 1a)
10
3.4
-10
-2.6
A
-Pulsed
12
-10
P D
Power Dissipation for Single Operation
Power Dissipation for Dual Operation
T C = 25 °C
T A = 25 °C
(Note 1a)
22
2.5
37
W
T J , T STG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
R θ JA
R θ JA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
(Note 1a)
(Note 1b)
50
160
°C/W
Package Marking and Ordering Information
Device Marking
FDMQ8203
Device
FDMQ8203
Package
MLP4.5x5
Reel Size
13 ”
Tape Width
12 mm
Quantity
3000 units
?2011 Fairchild Semiconductor Corporation
FDMQ8203 Rev.C1
1
www.fairchildsemi.com
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