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参数资料
| 型号： | FDME1034CZT |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/11页 |
| 文件大小： | 0K |
| 描述： | MOSFET N/P-CH 20V 6-MICROFET |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | N 和 P 沟道 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 3.8A，2.6A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 66 毫欧 @ 3.4A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 4.2nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 300pF @ 10V |
| 功率 - 最大： | 600mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-WDFN 裸露焊盘 |
| 供应商设备封装： | 6-MicroFET（1.6x1.6） |
| 包装： | 标准包装 |
| 其它名称： | FDME1034CZTFSDKR |
July 2010
FDME1034CZT
Complementary PowerTrench ? MOSFET
N-channel: 20 V, 3.8 A, 66 m Ω P-channel: -20 V, -2.6 A, 142 m Ω
Features
Q1: N-Channel
Max r DS(on) = 66 m Ω at V GS = 4.5 V, I D = 3.4 A
Max r DS(on) = 86 m Ω at V GS = 2.5 V, I D = 2.9 A
Max r DS(on) = 113 m Ω at V GS = 1.8 V, I D = 2.5 A
Max r DS(on) = 160 m Ω at V GS = 1.5 V, I D = 2.1 A
Q2: P-Channel
Max r DS(on) = 142 m Ω at V GS = -4.5 V, I D = -2.3 A
Max r DS(on) = 213 m Ω at V GS = -2.5 V, I D = -1.8 A
Max r DS(on) = 331 m Ω at V GS = -1.8 V, I D = -1.5 A
Max r DS(on) = 530 m Ω at V GS = -1.5 V, I D = -1.2 A
Low profile: 0.55 mm maximum in the new package
MicroFET 1.6x1.6 Thin
Free from halogenated compounds and antimony
oxides
HBM ESD protection level > 1600 V (Note 3)
RoHS Compliant
D2
G1
General Description
This device is designed specifically as a single package solution
for a DC/DC ‘Switching’ MOSFET in cellular handset and other
ultra-portable applications. It features an independent
N-Channel & P-Channel MOSFET with low on-state resistance
for minimum conduction losses. The gate charge of each
MOSFET is also minimized to allow high frequency switching
directly from the controlling device.
The MicroFET 1.6x1.6 Thin package offers exceptional thermal
performance for it's physical size and is well suited to switching
and linear mode applications.
Applications
DC-DC Conversion
Level Shifted Load Switch
S1
D2
Pin 1
D1
S2
G2
D1
BOTTOM
TOP
MicroFET 1.6x1.6 Thin
MOSFET Maximum Ratings T A = 25 °C unless otherwise noted
Symbol
V DS
V GS
Drain to Source Voltage
Gate to Source Voltage
Parameter
Q1
20
±8
Q2
-20
±8
Units
V
V
I D
Drain Current
-Continuous
-Pulsed
T A = 25 °C
(Note 1a)
3.8
6
-2.6
-6
A
P D
Power Dissipation for Single Operation
Power Dissipation for Single Operation
T A = 25 °C
T A = 25 °C
(Note 1a)
(Note 1b)
1.4
0.6
W
T J , T STG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
R θ JA
R θ JA
Thermal Resistance, Junction to Ambient (Single Operation)
Thermal Resistance, Junction to Ambient (Single Operation)
(Note 1a)
(Note 1b)
90
195
°C/W
Package Marking and Ordering Information
Device Marking
5T
Device
FDME1034CZT
Package
MicroFET 1.6x1.6 Thin
Reel Size
7 ’’
Tape Width
8 mm
Quantity
5000 units
?2010 Fairchild Semiconductor Corporation
FDME1034CZT Rev.C1
1
www.fairchildsemi.com
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