参数资料
型号: FDMC8622
厂商: Fairchild Semiconductor
文件页数: 3/7页
文件大小: 0K
描述: MOSFET N-CH 100V 4A POWER33
标准包装: 1
系列: PowerTrench®
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 100V
电流 - 连续漏极(Id) @ 25° C: 4A
开态Rds(最大)@ Id, Vgs @ 25° C: 56 毫欧 @ 4A,10V
Id 时的 Vgs(th)(最大): 4V @ 250µA
闸电荷(Qg) @ Vgs: 7.3nC @ 10V
输入电容 (Ciss) @ Vds: 402pF @ 50V
功率 - 最大: 2.5W
安装类型: 表面贴装
封装/外壳: 8-PowerWDFN
供应商设备封装: 8-MLP(3.3X3.3),Power33
包装: 标准包装
其它名称: FDMC8622DKR
Typical Characteristics T J = 25°C unless otherwise noted
30
25
20
15
V GS = 10 V
V GS = 7 V
V GS = 6.5 V
V GS = 6 V
4
3
2
V GS = 5 V
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5%MAX
V GS = 6 V
V GS = 6.5 V
PULSE DURATION = 80 μ s
10
DUTY CYCLE = 0.5%MAX
5
V GS = 5 V
1
V GS = 7 V
V GS = 10 V
0
0
1 2 3
4
0
0
5
10
15
20
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
I D , DRAIN CURRENT(A)
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
2.0
I D = 4 A
1.8 V GS = 10 V
0.5
0.4
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5%MAX
1.6
1.4
1.2
1.0
0.8
0.3
0.2
0.1
T J = 25 o C
I D = 4 A
T J = 125 o C
0.6
-75
-50
-25
0
25
50
75
100 125 150
0.0
2
4
6
8
10
T J , JUNCTION TEMPERATURE ( o C )
Figure 3. Normalized On- Resistance
vs Junction Temperature
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
30
25
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5%MAX
V DS = 5 V
40
10
V GS = 0 V
20
T J = 150 o C
15
10
5
T J = 150 o C
T J = 25 o C
-55 o C
T J =
1
T J = 25 o C
T J = -55 o C
0
0
3
6
9
0.1
0.4
0.6
0.8
1.0
1.2
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
V SD , BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
?2012 Fairchild Semiconductor Corporation
FDMC8622 Rev.C5
3
www.fairchildsemi.com
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