- 您现在的位置：买卖IC网 > Datasheet目录420 > FDMC8200 (Fairchild Semiconductor)MOSFET 2N-CH 30V 8A/12A POWER33 Datasheet资料下载
参数资料
| 型号： | FDMC8200 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/11页 |
| 文件大小： | 0K |
| 描述： | MOSFET 2N-CH 30V 8A/12A POWER33 |
| 产品目录绘图： | 8-MLP, Power33, 56 Dual |
| 特色产品： | FDMC8200 Dual MOSFET for Synchronous Buck Designs |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 8A，12A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 20 毫欧 @ 6A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 10nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 660pF @ 15V |
| 功率 - 最大： | 700mW，900mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-PowerVDFN |
| 供应商设备封装： | 8-Power33（3x3） |
| 包装： | 标准包装 |
| 其它名称： | FDMC8200DKR |
June 2009
FDMC8200
Dual N-Channel PowerTrench ? MOSFET
30 V, 9.5 m ? and 20 m ?
Features
Q1: N-Channel
Max r DS(on) = 20 m ? at V GS = 10 V, I D = 6 A
Max r DS(on) = 32 m ? at V GS = 4.5 V, I D = 5 A
Q2: N-Channel
Max r DS(on) = 9.5 m ? at V GS = 10 V, I D = 9 A
Max r DS(on) = 13.5 m ? at V GS = 4.5 V, I D = 7 A
RoHS Compliant
General Description
This device includes two specialized N-Channel MOSFETs in a
dual Power33 (3mm x 3mm MLP) package. The switch node
has been internally connected to enable easy placement and
routing of synchronous buck converters. The control
MOSFET (Q1) and synchronous MOSFET (Q2) have been
designed to provide optimal power efficiency.
Applications
Mobile Computing
Mobile Internet Devices
General Purpose Point of Load
DE
NO
ITC
GN
DG
Pin 1
G1
D1
D1
D1
D1
D2/S1
G2
S2
S2
S2
G HS
V IN
V IN
V IN
V IN
H
SW
G LS
D
GN
ND
S2
S2
S2
G2
5
6
7
8
Q2
Q1
4 D1
3 D1
2 D1
1 G1
BOTTOM
BOTTOM
Power 33
MOSFET Maximum Ratings T C = 25 °C unless otherwise noted
Symbol
V DS
Drain to Source Voltage
Parameter
Q1
30
Q2
30
Units
V
V GS
I D
Gate to Source Voltage
Drain Current - Continuous (Package limited)
- Continuous (Silicon limited)
- Continuous
(Note 3)
T C = 25 °C
T C = 25 °C
T A = 25 °C
±20
18
23
8 1a
±20
18
45
12 1b
V
A
- Pulsed
40
40
P D
Power Dissipation
Power Dissipation
T A = 25 °C
T A = 25 °C
1.9 1a
0.7 1c
2.2 1b
0.9 1d
W
T J , T STG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
R θ JA
Thermal Resistance, Junction to Ambient
65 1a
55 1b
R θ JA
Thermal Resistance, Junction to Ambient
180
1c
145 1d
°C/W
R θ JC
Thermal Resistance, Junction to Case
7.5
4
Package Marking and Ordering Information
Device Marking
FDMC8200
Device
FDMC8200
Package
Power 33
Reel Size
13 ”
Tape Width
12 mm
Quantity
3000 units
?2009 Fairchild Semiconductor Corporation
FDMC8200 Rev.A1
1
www.fairchildsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| FDMC8321L | MOSFET N-CH 44V 49A 8-PQFN |
| FDMC8462 | MOSFET N-CH 40V 14A POWER33 |
| FDMC8554 | MOSFET N-CH 20V 16.5A POWER33 |
| FDMC8588 | MOSFET N-CH 25V 17A 8-MLP |
| FDMC86102LZ | MOSFET N-CH 100V 7A 8MLP |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDMC8200 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET Transistor |
| FDMC8200_F128 | 功能描述:MOSFET Dual N-CH 30V 12A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMC8200-CUT TAPE | 制造商:FAIRCHILD 功能描述:FDMC8200 Series 30 V 20 mOhm Dual N-Channel PowerTrench?Mosfet - Power33 |
| FDMC8200S | 功能描述:MOSFET 30V Dual N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMC8200S_F106 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N-CH DUAL 30V 8MLP |
发布紧急采购，3分钟左右您将得到回复。