参数资料
型号: FDMC8200
厂商: Fairchild Semiconductor
文件页数: 7/11页
文件大小: 0K
描述: MOSFET 2N-CH 30V 8A/12A POWER33
产品目录绘图: 8-MLP, Power33, 56 Dual
特色产品: FDMC8200 Dual MOSFET for Synchronous Buck Designs
标准包装: 1
系列: PowerTrench®
FET 型: 2 个 N 沟道(双)
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 8A,12A
开态Rds(最大)@ Id, Vgs @ 25° C: 20 毫欧 @ 6A,10V
Id 时的 Vgs(th)(最大): 3V @ 250µA
闸电荷(Qg) @ Vgs: 10nC @ 10V
输入电容 (Ciss) @ Vds: 660pF @ 15V
功率 - 最大: 700mW,900mW
安装类型: 表面贴装
封装/外壳: 8-PowerVDFN
供应商设备封装: 8-Power33(3x3)
包装: 标准包装
其它名称: FDMC8200DKR
Typical Characteristics (Q2 N-Channel) T J = 25 °C unless otherwise noted
40
V GS = 10 V
6
PULSE DURATION = 80 μ s
30
5
V GS = 3 V
DUTY CYCLE = 0.5% MAX
V GS = 4.5 V
4
20
V GS = 4 V
3
V GS = 3.5 V
V GS = 3.5 V
2
V GS = 4 V
V GS = 4.5 V
10
0
V GS = 3 V
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
1
0
V GS = 10 V
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
10
20
30
40
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 13. On-Region Characteristics
1.6
I D = 9 A
I D , DRAIN CURRENT (A)
Figure 14. Normalized on-Resistance vs Drain
Current and Gate Voltage
60
PULSE DURATION = 80 μ s
1.4
V GS = 10 V
50
DUTY CYCLE = 0.5% MAX
I D = 9 A
40
1.2
30
1.0
20
T J = 125 o C
0.8
10
T J = 25 o C
0.6
-75
-50
-25
0
25
50
75
100 125 150
0
2
4
6
8
10
T J , JUNCTION TEMPERATURE ( o C )
Figure 15. Normalized On-Resistance
vs Junction Temperature
40
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 16. On-Resistance vs Gate to
Source Voltage
40
30
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
V DS = 5 V
10
1
V GS = 0 V
T J = 150 o C
20
10
T J = 150 o C
T J = 25 o C
0.1
0.01
T J = 25 o C
T J = -55 o C
T J = -55 o C
0
0.001
1.5
2.0
2.5
3.0
3.5
4.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 17. Transfer Characteristics
V SD , BODY DIODE FORWARD VOLTAGE (V)
Figure 18. Source to Drain Diode
Forward Voltage vs Source Current
?2009 Fairchild Semiconductor Corporation
FDMC8200 Rev.A1
7
www.fairchildsemi.com
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