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| 型号： | FDMC7692S |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 8-MLP |
| 标准包装： | 3,000 |
| 系列： | PowerTrench®, SyncFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 12.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 9.3 毫欧 @ 12.5A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 1mA |
| 闸电荷(Qg) @ Vgs： | 23nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1385pF @ 15V |
| 功率 - 最大： | 2.3W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-MLP，Power33 |
| 供应商设备封装： | 8-MLP（3.3x3.3） |
| 包装： | 带卷 (TR) |
September 2010
FDMC7692S
N-Channel Power Trench ? SyncFET TM
30 V, 12.5 A, 9.3 m
Features
General Description
Max r DS(on) = 9.3 m
Max r DS(on) = 13.6 m
at V GS = 10 V, I D = 12.5 A
at V GS = 4.5 V, I D = 10.4 A
This FDMC7692S is produced using Fairchild Semiconductor’s
advanced Power Trench ? process that has been especially
tailored to minimize the on-state resistance. This device is well
High performance technology for extremely low r DS(on)
suited for Power Management and load switching applications
common in Notebook Computers and Portable Battery packs.
Termination is Lead-free and RoHS Compliant
Applications
DC - DC Buck Converters
Notebook DC - DC application
Top
Bottom
Pin 1
S
S
S
G
D
D
5
6
4
3
G
S
D
7
2
S
D
D
D
D
D
8
1
S
MLP 3.3x3.3
MOSFET Maximum Ratings T A = 25 °C unless otherwise noted
Symbol
V DS
V GS
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
T C = 25 °C
Ratings
30
±20
18
Units
V
V
I D
-Continuous
T A = 25 °C
(Note 1a)
12.5
A
-Pulsed
45
E AS
Sinlge Pulse Avalanche Energy
(Note 3)
21
mJ
P D
Power Dissipation
Power Dissipation
T C = 25 °C
T A = 25 °C
(Note 1a)
27
2.3
W
T J , T STG
Operating and Storage Junction Temperature Range
-55 to +150
° C
Thermal Characteristics
R
JC
Thermal Resistance, Junction to Case
4.7
°C/W
R
JA
Thermal Resistance, Junction to Ambient
(Note 1a)
53
°C/W
Package Marking and Ordering Information
Device Marking
FDMC7692S
Device
FDMC7692S
Package
MLP 3.3X3.3
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
?2010 Fairchild Semiconductor Corporation
FDMC7692S Rev.C3
1
www.fairchildsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDMC7692S_F125 | 功能描述:MOSFET 30V N-CHAN 12.5A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMC7692S_F126 | 功能描述:MOSFET 30V N-CHAN 12.5A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMC7692S_F127 | 功能描述:MOSFET 30V N-CHAN 12.5A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMC7696 | 功能描述:MOSFET 30V N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMC7696_F065 | 功能描述:MOSFET Single PT7 N in MLP3.3x3.3 Combo RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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