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参数资料
| 型号： | FDMC7660 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 20A 8-PQFN |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 20A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 2.2 毫欧 @ 20A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 86nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 4830pF @ 15V |
| 功率 - 最大： | 2.3W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-PowerTDFN |
| 供应商设备封装： | 8-PQFN（3.3X3.3），Power33 |
| 包装： | 标准包装 |
| 其它名称： | FDMC7660DKR |
Electrical Characteristics T J = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV DSS
Δ BV DSS
Δ T J
I DSS
I GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I D = 250 μ A, V GS = 0 V
I D = 250 μ A, referenced to 25°C
V DS = 24 V, V GS = 0 V
V GS = 20 V, V DS = 0 V
30
14
1
100
V
mV/°C
μ A
nA
On Characteristics
V GS(th)
Δ V GS(th)
Δ T J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V GS = V DS , I D = 250 μ A
I D = 250 μ A, referenced to 25°C
1.2
1.7
-6
2.5
V
mV/°C
V GS = 10 V, I D = 20 A
1.8
2.2
r DS(on)
Static Drain to Source On Resistance
V GS = 4.5 V, I D = 18 A
2.6
3.3
m Ω
V GS = 10 V, I D = 20 A, T J = 125°C
2.2
3.1
g FS
Forward Transconductance
V DS = 5 V, I D = 20 A
163
S
Dynamic Characteristics
C iss
C oss
C rss
R g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V DS = 15 V, V GS = 0 V,
f = 1MHz
3630
1345
110
0.9
4830
1790
165
pF
pF
pF
Ω
Switching Characteristics
t d(on)
Turn-On Delay Time
14
25
ns
t r
t d(off)
t f
Q g
Q g
Q gs
Q gd
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
V DD = 15 V, I D = 20 A,
V GS = 10 V, R GEN = 6 Ω
V GS = 0 V to 10 V
V GS = 0 V to 4.5 V V DD = 15 V,
I D = 20 A
6.8
36
5.7
54
24
11
5.6
14
58
11
86
38
ns
ns
ns
nC
nC
nC
nC
Drain-Source Diode Characteristics
V SD
Source-Drain Diode Forward Voltage
V GS = 0 V, I S = 20 A
V GS = 0 V, I S = 1.9 A
(Note 2)
(Note 2)
0.8
0.7
1.2
1.2
V
t rr
Q rr
Reverse Recovery Time
Reverse Recovery Charge
I F = 20 A, di/dt = 100 A/ μ s
45
25
63
35
ns
nC
Notes :
1. R θ JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
R θ JC is guaranteed by design while R θ JA is determined by the user’s board design.
a. 53 °C/W when mounted on a
1 in 2 pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 μ s, Duty cycle < 2.0%.
3. Starting T J = 25 °C, L = 1 mH, I AS = 20 A, V DD = 27 V, V GS = 10 V
4. As an N-channel device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied.
b. 125 °C/W when mounted on
a minimum pad of 2 oz copper
?2012 Fairchild Semiconductor Corporation
FDMC7660 Rev.C5
2
www.fairchildsemi.com
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