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| 型号： | FDMC8882 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 8-MLP |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 10.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 14.3 毫欧 @ 10.5A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 20nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 945pF @ 15V |
| 功率 - 最大： | 2.3W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-MLP，Power33 |
| 供应商设备封装： | 8-MLP（3.3x3.3） |
| 包装： | 标准包装 |
| 其它名称： | FDMC8882FSDKR |
Electrical Characteristics T J = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV DSS
' BV DS S
' T J
I DSS
I GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I D = 250 P A, V GS = 0 V
I D = 250 P A, referenced to 25 °C
V DS = 24 V, V GS = 0 V
T J = 125 °C
V GS = ±20 V, V DS = 0 V
30
25
1
250
±100
V
mV/°C
P A
nA
On Characteristics
V GS(th)
' V GS(th)
' T J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V GS = V DS , I D = 250 P A
I D = 250 P A, referenced to 25 °C
1.2
1.9
-5
2.5
V
mV/°C
V GS = 10 V, I D = 10.5 A
12.4
14.3
r DS(on)
g FS
Static Drain to Source On Resistance
Forward Transconductance
V GS = 4.5 V, I D = 8.3 A
V GS = 10 V, I D = 10.5 A
T J = 125 °C
V DD = 5 V, I D = 10.5 A
16.0
17.4
33
22.5
m :
S
Dynamic Characteristics
C iss
C oss
C rss
R g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V DS = 15 V, V GS = 0 V,
f = 1 MHz
710
140
90
1.0
945
185
135
pF
pF
pF
:
Switching Characteristics
t d(on)
Turn-On Delay Time
7
14
ns
t r
t d(off)
t f
Q g(TOT)
Q gs
Q gd
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Total Gate Charge
Gate to Drain “Miller” Charge
V DD = 15 V, I D = 10.5 A,
V GS = 10 V, R GEN = 6 :
V GS = 0 V to 10 V
V GS = 0 V to 4.5 V V DD = 15 V
I D = 10.5 A
3
17
2
14
7
2.3
2.8
10
30
10
20
10
ns
ns
ns
nC
nC
nC
nC
Drain-Source Diode Characteristics
V SD
Source to Drain Diode Forward Voltage
V GS = 0 V, I S = 10.5 A
V GS = 0 V, I S = 1.9 A
(Note 2)
(Note 2)
0.88
0.76
1.2
1.2
V
t rr
Q rr
Reverse Recovery Time
Reverse Recovery Charge
I F = 10.5 A, di/dt = 100 A/ P s
16
4.4
28
10
ns
nC
NOTES:
1. R T JA is determined with the device mounted on a 1 in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R T JC is guaranteed by design while R T CA is determined by
the user's board design.
a. 53 °C/W when mounted on
a 1 in 2 pad of 2 oz copper
2. Pulse Test: Pulse Width < 30 0 P s, Duty cycle < 2.0 %.
b.125 °C/W when mounted on
a minimum pad of 2 oz copper
?2010 Fairchild Semiconductor Corporation
FDMC8882 Rev.C2
2
www.fairchildsemi.com
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