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参数资料
| 型号： | FDMF6705 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 15/19页 |
| 文件大小： | 0K |
| 描述： | MODULE DRMOS HI PERF HF POWER66 |
| 标准包装： | 3,000 |
| 系列： | XS™ DrMOS |
| 类型： | 高端/低端驱动器 |
| 输入类型： | PWM |
| 输出数： | 1 |
| 电流 - 峰值输出： | 40A |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 40-PowerTFQFN |
| 供应商设备封装： | 40-PQFN（6x6） |
| 包装： | 带卷 (TR) |
Application Information
Supply Capacitor Selection
For the supply inputs (VDRV & VCIN), a local ceramic
bypass capacitor is required to reduce noise and to
supply peak transient currents during gate drive
switching action. It is recommended to use a minimum
capacitor value of 1 μF X7R or X5R. Keep this capacitor
close to the VCIN and VDRV pins and connect it to the
GND plane with vias.
Bootstrap Circuit
The bootstrap circuit uses a charge storage capacitor
(C BOOT ), as shown in Figure 28. A bootstrap capacitance
of 100 nF X7R or X5R capacitor is typically adequate. A
series bootstrap resistor would be needed for specific
applications to improve switching noise immunity. The
VCIN Filter
The VDRV pin provides power to the gate drive of the
high-side and low-side power MOSFETs. In most cases,
VDRV can be connected directly to VCIN, which
supplies power to the logic circuitry of the gate driver.
For additional noise immunity, an RC filter can be
inserted between VDRV and VCIN. Recommended
values of 10 ? (R VCIN ) placed between VDRV and VCIN
and 1 μF (C VCIN ) from VCIN to CGND (see Figure 29) .
Power Loss and Efficiency
Measurement and Calculation
Refer to Figure 28 for power loss testing method.
Power loss calculations are:
boot resistor (R BOOT ) may be required when operating
near the maximum rated V IN and is effective at controlling
the high-side MOSFET turn-on slew rate and V SHW
overshoot. Typical R BOOT values from 0.5 ? to 3.0 ? are
effective in reducing V SWH overshoot for the FDMF6705.
P IN =(V IN x I IN ) + (V 5V x I 5V ) (W)
P SW =V SW x I OUT (W)
P OUT =V OUT x I OUT (W)
P LOSS_MODULE =P IN - P SW (W)
P LOSS_BOARD =P IN - P OUT (W)
EFF MODULE =100 x P SW /P IN (%)
EFF BOARD =100 x P OUT /P IN (%)
(1)
(2)
(3)
(4)
(5)
(6)
(7)
Figure 28. Power Loss Measurement Block Diagram
Figure 29. Block Diagram with V CIN Filter
? 2011 Fairchild Semiconductor Corporation
FDMF6705 ? Rev. 1.0.4
15
www.fairchildsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDMF6705B | 功能描述:功率驱动器IC Xtra-Small Hi-Perf Hi-Freq DrMOS Module RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| FDMF6705V | 功能描述:功率驱动器IC XS DrMOS; Hi-Freq Hi-Perf Module RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| FDMF6706B | 功能描述:功率驱动器IC Xtra-Small Hi-Perf Hi-Freq DrMOS Module RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| FDMF6706C | 功能描述:功率驱动器IC XS DrMOS; Hi-Freq Hi-Perf Module RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| FDMF6707B | 功能描述:功率驱动器IC XS DrMOS; Hi-Freq Hi-Perf Module RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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