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参数资料
| 型号： | FDMF6705B |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 13/19页 |
| 文件大小： | 0K |
| 描述： | MOSFET DRMOS 40A 300KHZ 40PQFN |
| 标准包装： | 1 |
| 系列： | XS™ DrMOS |
| 类型： | 高端/低端驱动器 |
| 输入类型： | PWM |
| 输出数： | 1 |
| 电流 - 峰值输出： | 40A |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 40-PowerTFQFN |
| 供应商设备封装： | 40-PQFN（6x6） |
| 包装： | 标准包装 |
| 其它名称： | FDMF6705BDKR |
Adaptive Gate Drive Circuit
The driver IC advanced design ensures minimum
MOSFET dead time, while eliminating potential shoot-
through (cross-conduction) currents. It senses the state
of the MOSFETs and adjusts the gate drive adaptively
to ensure they do not conduct simultaneously. Figure 26
provides the relevant timing waveforms. To prevent
overlap during the LOW-to-HIGH switching transition
(Q2 off to Q1 on), the adaptive circuitry monitors the
voltage at the GL pin. When the PWM signal goes
HIGH, Q2 turns off after a propagation delay (t PD_PHGLL ).
Once the GL pin is discharged below ~1 V, Q1 turns on
after adaptive delay, t D_DEADON .
To preclude overlap during the HIGH-to-LOW transition
(Q1 off to Q2 on), the adaptive circuitry monitors the
voltage at the VSWH pin. When the PWM signal goes
LOW, Q1 turns off after a propagation delay (t PD_PLGHL ).
Once the VSWH pin falls below ~2.2 V, Q2 turns on
after adaptive delay, t D_DEADOFF . Additionally, V GS(Q1) is
monitored. When V GS(Q1) is discharged below ~1.2 V, a
secondary adaptive delay is initiated, which results in
Q2 being driven on after t D_TIMEOUT , regardless of SW
state. This function is implemented to ensure C BOOT is
recharged each switching cycle in the event that the SW
voltage does not fall below the 2.2 V adaptive threshold.
Secondary delay t D_TIMEOUT is longer than t D_DEADOFF .
V IH_PWM
V IH_PWM
V TRI_HI
V IH_PWM
V IH PWM
V TRI_HI
V IL_PWM
V TRI_LO
PWM
t R_GH
t F_GH
V IL_PWM
GH
to
less than
t D_HOLD - OFF
t D_HOLD -OFF
90%
10%
VSWH
V IN
VSWH
CCM
2.2V
DCM
DCM
V OUT
GL
90%
90%
1.0V
10%
10%
t PD_PHGLL
t PD_PLGHL t R_GL
t F_GL
t PD_TSGHH
t D_HOLD -OFF
t PD_TSGHH
less than
t D_HOLD - OFF
t D_HOLD-OFF t PD_TSGLH
t D_DEADON
t D_DEADOFF
Enter
3-State
Exit
3-State
Enter
3 -State
Exit
3 State
Enter
3 -State
Exit
3-State
Notes:
t PD_xxx = propagation delay from external signal (PWM, SMOD#, etc.) to IC generated signal. Example (t PD_PHGLL – PWM going HIGH to LS V GS (GL) going LOW)
t D_xxx = delay from IC generated signal to IC generated signal. Example (t D_DEADON – LS V GS (GL) LOW to HS V GS (GH) HIGH)
PWM
t PD_PHGLL = PWM rise to LS V GS fall, V IH_PWM to 90% LS V GS
t PD_PLGHL = PWM fall to HS V GS fall, V IL_PWM to 90% HS V GS
t PD_PHGHH = PWM rise to HS V GS rise, V IH_PWM to 10% HS V GS (SMOD# held LOW)
SMOD#
t PD_SLGLL = SMOD# fall to LS V GS fall, V IL_SMOD to 90% LS V GS
t PD_SHGLH = SMOD# rise to LS V GS rise, V IH_SMOD to 10% LS V GS
Exiting 3-state
t PD_TSGHH = PWM 3-state to HIGH to HS V GS rise, V IH_PWM to 10% HS V GS
t PD_TSGLH = PWM 3-state to LOW to LS V GS rise, V IL_PWM to 10% LS V GS
Dead Times
t D_DEADON = LS V GS fall to HS V GS rise, LS-comp trip value (~1.0V GL) to 10% HS V GS
t D_DEADOFF = VSWH fall to LS V GS rise, SW-comp trip value (~2.2V VSWH) to 10% LS V GS
Figure 26. PWM and 3-StateTiming Diagram
? 2011 Fairchild Semiconductor Corporation
FDMF6705B ? Rev. 1.0.3
13
www.fairchildsemi.com
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| FDMF6705V | 功能描述:功率驱动器IC XS DrMOS; Hi-Freq Hi-Perf Module RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| FDMF6706B | 功能描述:功率驱动器IC Xtra-Small Hi-Perf Hi-Freq DrMOS Module RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| FDMF6706C | 功能描述:功率驱动器IC XS DrMOS; Hi-Freq Hi-Perf Module RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| FDMF6707B | 功能描述:功率驱动器IC XS DrMOS; Hi-Freq Hi-Perf Module RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| FDMF6707C | 功能描述:功率驱动器IC Xtra-Small Hi-Perf Hi-Freq DrMOS Module RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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