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参数资料
| 型号： | FDMF6705B |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 15/19页 |
| 文件大小： | 0K |
| 描述： | MOSFET DRMOS 40A 300KHZ 40PQFN |
| 标准包装： | 1 |
| 系列： | XS™ DrMOS |
| 类型： | 高端/低端驱动器 |
| 输入类型： | PWM |
| 输出数： | 1 |
| 电流 - 峰值输出： | 40A |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 40-PowerTFQFN |
| 供应商设备封装： | 40-PQFN（6x6） |
| 包装： | 标准包装 |
| 其它名称： | FDMF6705BDKR |
Application Information
Supply Capacitor Selection
For the supply inputs (VDRV and VCIN), a local ceramic
bypass capacitor is required to reduce noise and to
supply peak transient currents during gate drive
switching action. It is recommended to use a minimum
capacitor value of 1 μF X7R or X5R. Keep this capacitor
close to the VCIN and VDRV pins and connect it to the
GND plane with vias.
Bootstrap Circuit
The bootstrap circuit uses a charge storage capacitor
(C BOOT ), as shown in Figure 28. A bootstrap capacitance
of 100 nF X7R or X5R capacitor is typically adequate. A
series bootstrap resistor may be needed for specific
VCIN Filter
The VDRV pin provides power to the gate drive of the
high-side and low-side power MOSFETs. In most cases,
VDRV can be connected directly to VCIN, which
supplies power to the logic circuitry of the gate driver.
For additional noise immunity, an RC filter can be
inserted between VDRV and VCIN. Recommended
values of 10 ? (R VCIN ) placed between VDRV and VCIN
and 1 μF (C VCIN ) from VCIN to CGND, Figure 28.
Power Loss and Efficiency
Measurement and Calculation
Refer to Figure 29 for power-loss testing method. Power
loss calculations are:
applications to improve switching noise immunity. The
boot resistor (R BOOT ) may be required when operating
near the maximum rated V IN and is effective at
controlling the high-side MOSFET turn-on slew rate and
VSHW overshoot. Typical R BOOT values from 0.5 to
3.0 Ω are effective in reducing VSWH overshoot.
P IN =(V IN x I IN ) + (V 5V x I 5V ) (W)
P SW =V SW x I OUT (W)
P OUT =V OUT x I OUT (W)
P LOSS_MODULE =P IN - P SW (W)
P LOSS_BOARD =P IN - P OUT (W)
EFF MODULE =100 x P SW /P IN (%)
EFF BOARD =100 x P OUT /P IN (%)
(1)
(2)
(3)
(4)
(5)
(6)
(7)
V OUT
Figure 28. Block Diagram with V CIN Filter
Figure 29. Power Loss Measurement
? 2011 Fairchild Semiconductor Corporation
FDMF6705B ? Rev. 1.0.3
15
www.fairchildsemi.com
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| FDMF6705V | 功能描述:功率驱动器IC XS DrMOS; Hi-Freq Hi-Perf Module RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| FDMF6706B | 功能描述:功率驱动器IC Xtra-Small Hi-Perf Hi-Freq DrMOS Module RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| FDMF6706C | 功能描述:功率驱动器IC XS DrMOS; Hi-Freq Hi-Perf Module RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| FDMF6707B | 功能描述:功率驱动器IC XS DrMOS; Hi-Freq Hi-Perf Module RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| FDMF6707C | 功能描述:功率驱动器IC Xtra-Small Hi-Perf Hi-Freq DrMOS Module RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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