参数资料
| 型号： | FDMF6707C |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 12/18页 |
| 文件大小： | 0K |
| 描述： | MODULE DRMOS 50A 40-PQFN |
| 标准包装： | 3,000 |
| 系列： | XS™ DrMOS |
| 类型： | 高端/低端驱动器 |
| 输入类型： | PWM |
| 输出数： | 1 |
| 电流 - 输出 / 通道： | 50A |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 40-PowerTFQFN |
| 供应商设备封装： | 40-PQFN（6x6） |
| 包装： | 带卷 (TR) |
Adaptive Gate Drive Circuit
The driver IC design ensures minimum MOSFET dead
time, while eliminating potential shoot-through (cross-
conduction) currents. It senses the state of the MOSFETs
and adjusts the gate drive adaptively to prevent
simultaneous conduction. Figure 25 provides the timing
waveforms. To prevent overlap during the LOW-to-HIGH
switching transition (Q2 off to Q1 on), the adaptive
circuitry monitors the voltage at the GL pin. When the
PWM signal goes HIGH, Q2 turns off after a propagation
delay (t PD_PHGLL ). Once the GL pin is discharged below
~1 V, Q1 turns on after adaptive delay, t D_DEADON .
To prevent overlap during the HIGH-to-LOW transition
(Q1 off to Q2 on), the adaptive circuitry monitors the
voltage at the VSWH pin. When the PWM signal goes
LOW, Q1 turns off after a propagation delay (t PD_PLGHL ).
Once the VSWH pin falls below ~2.2 V, Q2 turns on
after adaptive delay, t D_DEADOFF . Additionally, V GS(Q1) is
monitored. When V GS(Q1) is discharged below ~1.2 V, a
secondary adaptive delay is initiated that results in Q2
being driven on after t D_TIMEOUT , regardless of VSWH
state. This function ensures C BOOT is recharged each
switching cycle in the event that the VSWH voltage does
not fall below the 2.2 V adaptive threshold. Secondary
delay t D_TIMEOUT is longer than t D_DEADOFF .
V IH_PWM
V IH_PWM
V TRI_HI
V IH_PWM
V IH PWM
V TRI_HI
V IL_PWM
V TRI_LO
PWM
t R_GH
t F_GH
V IL_PWM
GH
to
less than
t D_HOLD - OFF
t D_HOLD -OFF
90%
10%
VSWH
V IN
VSWH
CCM
2.2V
DCM
DCM
V OUT
GL
90%
90%
1.0V
10%
10%
t PD_PHGLL
t PD_PLGHL t R_GL
t F_GL
t PD_TSGHH
t D_HOLD -OFF
t PD_TSGHH
less than
t D_HOLD - OFF
t D_HOLD-OFF t PD_TSGLH
t D_DEADON
t D_DEADOFF
Enter
3-State
Exit
3-State
Enter
3 -State
Exit
3 State
Enter
3 -State
Exit
3-State
Notes:
t PD_xxx = propagation delay from external signal (PWM, SMOD#, etc.) to IC generated signal. Example (t PD_PHGLL – PWM going HIGH to LS V GS (GL) going LOW)
t D_xxx = delay from IC generated signal to IC generated signal. Example (t D_DEADON – LS V GS (GL) LOW to HS V GS (GH) HIGH)
PWM
t PD_PHGLL = PWM rise to LS V GS fall, V IH_PWM to 90% LS V GS
t PD_PLGHL = PWM fall to HS V GS fall, V IL_PWM to 90% HS V GS
t PD_PHGHH = PWM rise to HS V GS rise, V IH_PWM to 10% HS V GS (SMOD# held LOW)
Exiting 3-state
t PD_TSGHH = PWM 3-state to HIGH to HS V GS rise, V IH_PWM to 10% HS V GS
t PD_TSGLH = PWM 3-state to LOW to LS V GS rise, V IL_PWM to 10% LS V GS
SMOD#
t PD_SLGLL = SMOD# fall to LS V GS fall, V IL_SMOD to 90% LS V GS
t PD_SHGLH = SMOD# rise to LS V GS rise, V IH_SMOD to 10% LS V GS
Figure 25.
? 2011 Fairchild Semiconductor Corporation
FDMF6707C ? Rev. 1.0.2
Dead Times
t D_DEADON = LS V GS fall to HS V GS rise, LS-comp trip value (~1.0V GL) to 10% HS V GS
t D_DEADOFF = VSWH fall to LS V GS rise, SW-comp trip value (~2.2V VSWH) to 10% LS V GS
PWM and 3-StateTiming Diagram
www.fairchildsemi.com
12
相关PDF资料 |
PDF描述 |
|---|---|
| FDMF6707V | MODULE DRMOS 50A 40-PQFN |
| FDMF6708N | MODULE DRMOS 50A 40PQFN |
| FDMF6730 | IC DRIVER FET MULTICHIP 40-MLP |
| FDMF6820A | MODULE DRMOS 60A 40-PQFN |
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相关代理商/技术参数 |
参数描述 |
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| FDMF6707V | 功能描述:功率驱动器IC Hi Performance, Hi Frequency DrMOS RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| FDMF6708N | 功能描述:功率驱动器IC XS DrMOS Module Hi-Perf, Hi-Freq RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| FDMF6730 | 功能描述:功率驱动器IC Plus Driver Multichip Modules RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| FDMF6820A | 功能描述:功率驱动器IC Xtra Small, Hi Perf, Hi Freq DrMOS Module RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| FDMF6820B | 功能描述:功率驱动器IC Xtra Small, Hi Perf, Hi Freq DrMOS Module RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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