参数资料
| 型号： | FDMF6707C |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 14/18页 |
| 文件大小： | 0K |
| 描述： | MODULE DRMOS 50A 40-PQFN |
| 标准包装： | 3,000 |
| 系列： | XS™ DrMOS |
| 类型： | 高端/低端驱动器 |
| 输入类型： | PWM |
| 输出数： | 1 |
| 电流 - 输出 / 通道： | 50A |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 40-PowerTFQFN |
| 供应商设备封装： | 40-PQFN（6x6） |
| 包装： | 带卷 (TR) |
Application Information
Supply Capacitor Selection
For the supply inputs (V DRV and V CIN ), a local ceramic
bypass capacitor is required to reduce noise and to
supply peak transient currents during gate drive
switching action. It is recommended to use a minimum
capacitor value of 1 μF X7R or X5R. Keep this capacitor
close to the VCIN and VDRV pins and connect it to the
GND plane with vias.
Bootstrap Circuit
The bootstrap circuit uses a charge storage capacitor
(C BOOT ), as shown in Figure 27. A bootstrap capacitance
of 100 nF X7R or X5R capacitor is typically adequate. A
series bootstrap resistor may be needed for specific
VCIN Filter
The VDRV pin provides power to the gate drive of the
high-side and low-side power MOSFETs. In most cases,
VDRV can be connected directly to VCIN, which supplies
power to the logic circuitry of the gate driver. For
additional noise immunity, an RC filter can be inserted
between VDRV and VCIN. Recommended values would
be 10 ? (R VCIN ) placed between VDRV and VCIN and
1 μF (C VCIN ) from VCIN to CGND (see Figure 27).
Power Loss and Efficiency
Measurement and Calculation
Refer to Figure 28 for power loss testing method. Power
loss calculations are:
applications to improve switching noise immunity. The
boot resistor may be required when operating near the
maximum rated V IN and is effective at controlling the
high-side MOSFET turn-on slew rate and V SHW
overshoot. Typical R BOOT values from 0.5 ? to 2.0 ? are
effective in reducing V SWH overshoot.
P IN =(V IN x I IN ) + (V 5V x I 5V ) (W)
P SW =V SW x I OUT (W)
P OUT =V OUT x I OUT (W)
P LOSS_MODULE =P IN - P SW (W)
P LOSS_BOARD =P IN - P OUT (W)
EFF MODULE =100 x P SW /P IN (%)
EFF BOARD =100 x P OUT /P IN (%)
(1)
(2)
(3)
(4)
(5)
(6)
(7)
? 2011 Fairchild Semiconductor Corporation
FDMF6707C ? Rev. 1.0.2
Figure 27.
Figure 28.
Block Diagram With V CIN Filter
Power Loss Measurement
14
www.fairchildsemi.com
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相关代理商/技术参数 |
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| FDMF6707V | 功能描述:功率驱动器IC Hi Performance, Hi Frequency DrMOS RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| FDMF6708N | 功能描述:功率驱动器IC XS DrMOS Module Hi-Perf, Hi-Freq RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| FDMF6730 | 功能描述:功率驱动器IC Plus Driver Multichip Modules RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| FDMF6820A | 功能描述:功率驱动器IC Xtra Small, Hi Perf, Hi Freq DrMOS Module RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| FDMF6820B | 功能描述:功率驱动器IC Xtra Small, Hi Perf, Hi Freq DrMOS Module RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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