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参数资料
| 型号： | FDMF8704V |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 8/11页 |
| 文件大小： | 0K |
| 描述： | IC MOD DVR/FET W/VREG 56MLP 8X8 |
| 标准包装： | 1 |
| 类型： | 高端/低端驱动器 |
| 输入类型： | PWM |
| 输出数： | 1 |
| 电流 - 输出 / 通道： | 32A |
| 电流 - 峰值输出： | 65A |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | -55°C ~ 150°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 56-MLP |
| 供应商设备封装： | 56-MLP（8x8） |
| 包装： | 标准包装 |
| 产品目录页面： | 1216 (CN2011-ZH PDF) |
| 其它名称： | FDMF8704VDKR |
Application Information
Supply Capacitor Selection
For the supply input (V CIN ) of the FDMF8704V, a local ceramic
bypass capacitor is recommended to reduce the noise and to
supply the peak current. Use at least a 1μF, X7R or X5R capac-
itor. Keep this capacitor close to the FDMF8704V V CIN and
CGND pins.
Bootstrap Circuit
The bootstrap circuit uses a charge storage capacitor (C BOOT )
and the external schottky diode, as shown in Figure 18. A
Typical Application
V IN 12V
bootstrap capacitance of 100nF, X7R or X5R capacitor is
adequate.
The peak surge current rating of the boot diode should be
checked in-circuit, since this is dependent on the equivalent
impedance of the entire bootstrap circuit, including the PCB
traces. Boot diode must be sized big enough to carry the
forward charge current. Refer to Figure 14 for boot diode
average forward current.
The bootstrap diode must have low V F and low reverse current
leakage. Breakdown voltage of the bootstrap diode must be
greater than the BOOT to VSWH voltage.
NPN-TR
VAUX REG REGFB
VIN
PWM
VCIN
BOOT
HSEN
DISB
CGND
VSWH
PGND
FDMF8704V
NPN-TR
VAUX REG REGFB
VIN
PWM
VCIN
BOOT
VCC
EN
HSEN
PWM
PWM1
PWM2
DISB
CGND
VSWH
PGND
FDMF8704V
Controller PWM3
PWM4
GND
NPN-TR
VAUX REG REGFB
VOUT
VIN
PWM
VCIN
BOOT
Signal
GND
Power
GND
DISB
CGND
HSEN
VSWH
PGND
FDMF8704V
NPN-TR
VAUX REG REGFB
VIN
PWM
VCIN
BOOT
HSEN
DISB
CGND
VSWH
PGND
FDMF8704V
Figure 17. Typical Application
FDMF8704V Rev. G
8
www.fairchildsemi.com
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