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| 型号： | FDMS8460 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 40V 25A POWER56 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Power 56 Pkg/Design Change 14/Apr/2009 |
| 产品目录绘图： | Power56 Single |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 40V |
| 电流 - 连续漏极(Id) @ 25° C： | 25A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 2.2 毫欧 @ 25A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 110nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 7205pF @ 20V |
| 功率 - 最大： | 2.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-PQFN，Power56 |
| 供应商设备封装： | Power56 |
| 包装： | 标准包装 |
| 产品目录页面： | 1609 (CN2011-ZH PDF) |
| 其它名称： | FDMS8460DKR |
Electrical Characteristics T J = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV DSS
BV DSS
T J
I DSS
I GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I D = 250 A, V GS = 0V
I D = 250 A, referenced to 25°C
V GS = 0V, V DS = 32V,
V GS = ±20V, V DS = 0V
40
32
1
±100
V
mV/°C
A
nA
On Characteristics
V GS(th)
V GS(th)
T J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V GS = V DS , I D = 250 A
I D = 250 A, referenced to 25°C
1.0
1.9
-7.5
3.0
V
mV/°C
V GS = 10V, I D = 25A
2.0
2.2
r DS(on)
Static Drain to Source On Resistance
V GS = 4.5V, I D = 21.7A
2.6
3.0
m
V GS = 10V, I D = 25A, T J = 125°C
2.6
3.3
g FS
Forward Transconductance
V DD = 5V, I D = 25A
137
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = 20V, V GS = 0V,
f = 1MHz
5415
1470
170
7205
1955
250
pF
pF
pF
R g
Gate Resistance
f = 1MHz
0.1
1.4
3.1
Switching Characteristics
t d(on)
Turn-On Delay Time
19
35
ns
t r
t d(off)
t f
Q g
Q g
Q gs
Q gd
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
V DD = 20V, I D = 25A,
V GS = 10V, R GEN = 6
V GS = 0V to 10V
V GS = 0V to 4.5V V DD = 20V,
I D = 25A
9
48
7
78
36
15
10
19
78
14
110
51
ns
ns
ns
nC
nC
nC
nC
Drain-Source Diode Characteristics
V SD
t rr
Q rr
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0V, I S = 25A
V GS = 0V, I S = 2.1A
I F = 25A, di/dt = 100A/ s
(Note 2)
(Note 2)
0.8
0.7
53
40
1.3
1.2
85
64
V
ns
nC
NOTES:
1. R JA is determined with the device mounted on a 1in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
JC
is guaranteed by design while R
CA is
determined by
the user's board design.
a. 50°C/W when mounted on a
1 in 2 pad of 2 oz copper.
2. Pulse Test: Pulse Width < 30 0 s, Duty cycle < 2.0%.
3. Starting T J = 25 ° C, L = 3mH, I AS = 24A, V DD = 40V, V GS = 10V
b. 125°C/W when mounted on a
minimum pad of 2 oz copper.
?2012 Fairchild Semiconductor Corporation
FDMS8460 Rev.C3
2
www.fairchildsemi.com
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相关代理商/技术参数 |
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| FDMS8558S | 功能描述:MOSFET 25/12V Dual Cool PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMS8558SDC | 功能描述:MOSFET N-Channel PowerTrench SyncFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMS8560S | 功能描述:MOSFET 25/12V Dual Cool PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMS8570S | 功能描述:MOSFET 25/12V Dual Cool PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMS8570SDC | 功能描述:MOSFET 25V N-Channel PowerTrench SyncFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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