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| 型号： | FDMS86322 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 80V 60A LL POWER56 |
| 标准包装： | 3,000 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 80V |
| 电流 - 连续漏极(Id) @ 25° C： | 13A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 7.65 毫欧 @ 13A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 55nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 3000pF @ 50V |
| 功率 - 最大： | 2.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-PowerVDFN |
| 供应商设备封装： | Power56 |
| 包装： | 带卷 (TR) |
October 2010
FDMS86322
N-Channel PowerTrench ? MOSFET
80 V, 60 A, 7.65 m :
Features
? Max r DS(on) = 7.65 m : at V GS = 10 V, I D = 13 A
? Max r DS(on) = 12 m : at V GS = 6 V, I D = 7.2 A
? Advanced Package and Silicon combination for low r DS(on)
and high efficiency
? MSL1 robust package design
? 100% UIL tested
? RoHS Compliant
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench ? process thant has
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
Application
? DC-DC Conversion
Top
Bottom
Pin 1
S
S
S
G
D
D
5
6
4
3
G
S
D
7
2
S
D
D
D
D
D
8
1
S
Power 56
MOSFET Maximum Ratings T A = 25 °C unless otherwise noted
Symbol
V DS
V GS
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
T C = 25 °C
Ratings
80
±20
60
Units
V
V
I D
-Continuous (Silicon limited)
-Continuous
T C = 25 °C
T A = 25 °C
(Note 1a)
83
13
A
-Pulsed
200
E AS
Single Pulse Avalanche Energy
(Note 3)
135
mJ
P D
Power Dissipation
Power Dissipation
T C = 25 °C
T A = 25 °C
(Note 1a)
104
2.5
W
T J , T STG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
R T JC
R T JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(Note 1a)
1.2
50
°C/W
Package Marking and Ordering Information
Device Marking
FDMS86322
Device
FDMS86322
Package
Power 56
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
?2010 Fairchild Semiconductor Corporation
FDMS86322 Rev C
1
www.fairchildsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| FDMS86500DC | MOSFET N CH 60V 29A 8-PQFN |
| FDMS86500L | MOSFET N CH 60V 25A 8-PQFN |
| FDMS86520L | MOSFET N CH 60V 13.5A 8PQFN |
| FDMS86520 | MOSFET N-CH 60V 14A 8-PQFN |
| FDMS86540 | MOSFET N-CH 60V 20A 8-PQFN |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDMS86322_F065 | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FDMS86350 | 制造商:Fairchild Semiconductor Corporation 功能描述:PT7 80V/20V NCH POWER TRENCH - Tape and Reel 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N-CH 80V 80A POWER56 制造商:Fairchild Semiconductor Corporation 功能描述:TAPE REEL / PT7 80V/20V Nch Power Trench |
| FDMS86500DC | 功能描述:MOSFET 60V/20V NCh DualCool PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMS86500L | 功能描述:MOSFET 60V N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMS86500L_F142 | 功能描述:MOSFET 60V N-Chan PwrTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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