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| 型号： | FDMS86540 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 20A 8-PQFN |
| 标准包装： | 3,000 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 20A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 3.4 毫欧 @ 20A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 90nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 6435pF @ 30V |
| 功率 - 最大： | 2.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-TDFN 裸露焊盘 |
| 供应商设备封装： | 8-PQFN（5X6），Power56 |
| 包装： | 带卷 (TR) |
May 2013
FDMS86540
N-Channel PowerTrench ? MOSFET
60 V, 50 A, 3.4 m Ω
Features
Max r DS(on) = 3.4 m Ω at V GS = 10 V, I D = 20 A
Max r DS(on) = 4.1 m Ω at V GS = 8 V, I D = 18.5 A
Advanced Package and Silicon combination for low r DS(on)
and high efficiency
Next generation enhanced body diode technology,
engineered for soft recovery
MSL1 robust package design
100% UIL tested
RoHS Compliant
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers.It has been optimized
for low gate charge, low r DS(on) , fast switching speed and body
diode reverse recovery performance.
Applications
Primary Switch in isolated DC-DC
Synchronous Rectifier
Load Switch
Top
Bottom
S
S
S
Pin 1
G
S
S
D
D
S
D
D
D
D
D
G
D
Power 56
MOSFET Maximum Ratings T A = 25 °C unless otherwise noted
Symbol
V DS
V GS
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
Parameter
T C = 25 °C
Ratings
60
±20
50
Units
V
V
I D
-Continuous
T A = 25 °C
(Note 1a)
20
A
-Pulsed
(Note 4)
350
E AS
Single Pulse Avalanche Energy
(Note 3)
228
mJ
P D
Power Dissipation
Power Dissipation
T C = 25 °C
T A = 25 °C
(Note 1a)
96
2.5
W
T J , T STG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
R θ JC
R θ JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(Note 1a)
1.3
50
°C/W
Package Marking and Ordering Information
Device Marking
FDMS86540
Device
FDMS86540
Package
Power 56
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
?2012 Fairchild Semiconductor Corporation
FDMS86540 Rev. C3
1
www.fairchildsemi.com
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PDF描述 |
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| FDMS8880 | MOSFET N-CH 30V 13.5A POWER56 |
| FDMS9620S | MOSFET N-CHAN DUAL 30V POWER56 |
| FDN302P | MOSFET P-CH 20V 2.4A SSOT3 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDMS86540_F142 | 功能描述:MOSFET 60V N-Chan PwrTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMS86550 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET 60V N-Channel PowerTrench MOSFET |
| FDMS8660AS | 功能描述:MOSFET 30V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMS8660S | 功能描述:MOSFET 30V 40A 2.4 OHM NCH POWER T RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMS8660S_08 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench SyncFETTM |
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