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参数资料
| 型号： | FDMS9620S |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CHAN DUAL 30V POWER56 |
| 产品目录绘图： | 8-MLP, Power33, 56 Dual |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 7.5A，10A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 21.5 毫欧 @ 7.5A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 14nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 665pF @ 15V |
| 功率 - 最大： | 1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-MLP，Power56 |
| 供应商设备封装： | Power56 |
| 包装： | 标准包装 |
| 产品目录页面： | 1609 (CN2011-ZH PDF) |
| 其它名称： | FDMS9620SDKR |
July 2007
FDMS9620S
Dual N-Channel PowerTrench ? MOSFET
Q1: 30V, 16A, 21.5m Ω Q2: 30V, 18A, 13m Ω
Features
tm
Q1: N-Channel
Max r DS(on) = 21.5m Ω at V GS = 10V, I D = 7.5A
Max r DS(on) = 29.5m Ω at V GS = 4.5V, I D = 6.5A
Q2: N-Channel
General Description
This device includes two specialized MOSFETs in a unique dual
Power 56 package. It is designed to provide an optimal
Synchronous Buck power stage in terms of efficiency and PCB
Max r DS(on) = 13m Ω at V GS = 10V, I D = 10A
utilization.
The low switching loss "High Side" MOSFET is
Max r DS(on) = 17m Ω at V GS = 4.5V, I D = 8.5A
Low Qg high side MOSFET
Low r DS(on) low side MOSFET
Thermally efficient dual Power 56 package
Pinout optimized for simple PCB design
RoHS Compliant
complemented by a Low Conduction Loss "Low Side" SyncFET.
Applications
Synchronous Buck Converter for:
Notebook System Power
General Purpose Point of Load
G1
D1
D1
D1
D1
S2
S2
5
6
4
3
D1
D1
S1/D2
G2
S2
S2
7
2
D1
S2
S2
G2
8
1
G1
Power 56
MOSFET Maximum Ratings T A = 25°C unless otherwise noted
Symbol
V DS
V GS
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
-Continuous (Package limited) T C = 25°C
Q1
30
±20
16
Q2
30
±20
18
Units
V
V
I D
-Continuous (Silicon limited)
-Continuous
T C = 25°C
T A = 25°C
(Note 1a)
21
7.5
44
10
A
-Pulsed
60
60
P D
Power Dissipation for Single Operation
T A = 25°C
T A = 25°C
(Note 1a)
(Note 1b)
2.5
1
W
T J , T STG
Operating and Storage Junction Temperature Range
-55 to +150
° C
Thermal Characteristics
R θ JC
Thermal Resistance, Junction to Case
8.2
3.1
R θ JA
R θ JA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
(Note 1a)
(Note 1b)
50
120
°C/W
Package Marking and Ordering Information
Device Marking
FDMS9620S
Device
FDMS9620S
Package
Power 56
Reel Size
13”
Tape Width
12mm
Quantity
3000 units
?2007 Fairchild Semiconductor Corporation
FDMS9620S Rev.D2
1
www.fairchildsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDMS9620S_07 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual N-Channel PowerTrench㈢ MOSFET |
| FDMW2512NZ | 功能描述:MOSFET 2.5V NCH MONOLITHIC COMON DR RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDN 304P | 制造商:Fairchild Semiconductor 功能描述:Bulk |
| FDN 337N | 制造商:Fairchild Semiconductor 功能描述:Bulk |
| FDN 338P | 制造商:Fairchild Semiconductor 功能描述:Bulk |
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