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| 型号： | FDMS8670S |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 20A POWER56 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Plating Material Change 13/June/2007 Power 56 Pkg/Design Change 14/Apr/2009 |
| 产品目录绘图： | Power56 Single |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 20A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 3.5 毫欧 @ 20A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 1mA |
| 闸电荷(Qg) @ Vgs： | 73nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 4000pF @ 15V |
| 功率 - 最大： | 2.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-PQFN，Power56 |
| 供应商设备封装： | Power56 |
| 包装： | 标准包装 |
| 产品目录页面： | 1609 (CN2011-ZH PDF) |
| 其它名称： | FDMS8670SDKR |
May 2009
FDMS8670S
N-Channel PowerTrench ? SyncFET TM
30V, 42A, 3.5m
tm
Features
General Description
Max r DS(on) = 3.5m
Max r DS(on) = 5.0m
at V GS = 10V, I D = 20A
at V GS = 4.5V, I D = 17A
The FDMS8670S has been designed to minimize losses in
power conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
Advanced Package and Silicon combination for low r DS(on)
and high efficiency
SyncFET Schottky Body Diode
MSL1 robust package design
RoHS Compliant
r DS(on) while maintaining excellent switching performance. This
device has the added benefit of an efficient monolithic Schottky
body diode.
Application
Synchronous Rectifier for DC/DC Converters
Notebook Vcore/ GPU low side switch
Networking Point of Load low side switch
Telecom secondary side rectification
Top
Bottom
S
S
S
Pin 1
G
D
D
5
6
4
3
G
S
D
D
D
D
D
D
7
8
2
1
S
S
Power 56
MOSFET Maximum Ratings T A = 25°C unless otherwise noted
Symbol
V DS
V GS
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
T C = 25°C
T C = 25°C
Ratings
30
±20
42
116
Units
V
V
I D
-Continuous (Silicon limited)
-Continuous
T C = 100°C
T A = 25°C
74
20
A
-Pulsed
200
Power Dissipation
T C = 25°C
78
P D
Power Dissipation
Power Dissipation
T A = 25°C
T A = 85°C
(Note 1a)
(Note 1a)
2.5
1.3
W
T J , T STG
Operating and Storage Junction Temperature Range
-55 to +150
° C
Thermal Characteristics
R
R
JC
JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(Note 1a)
1.6
50
°C/W
Package Marking and Ordering Information
Device Marking
FDMS8670S
Device
FDMS8670S
Package
Power 56
Reel Size
13’’
Tape Width
12mm
Quantity
3000 units
?2009 Fairchild Semiconductor Corporation
FDMS8670S Rev.C5
1
www.fairchildsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| FDMS8848NZ | MOSFET N-CH 40V 22.8A POWER56 |
| FDMS8880 | MOSFET N-CH 30V 13.5A POWER56 |
| FDMS9620S | MOSFET N-CHAN DUAL 30V POWER56 |
| FDN302P | MOSFET P-CH 20V 2.4A SSOT3 |
| FDN304PZ | MOSFET P-CH 20V 2.4A SSOT-3 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDMS8670S_07 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ SyncFET TM 30V, 42A, 3.5mз |
| FDMS8670S_08 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ SyncFET TM |
| FDMS8672AS | 功能描述:MOSFET 30V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMS8672S | 功能描述:MOSFET 30V N-Channel PowerTrench SyncFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMS8674 | 功能描述:MOSFET 30V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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