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| 型号： | FDMS8848NZ |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 40V 22.8A POWER56 |
| 产品变化通告： | Power 56 Pkg/Design Change 14/Apr/2009 Product Discontinuation 27/Feb/2012 |
| 产品目录绘图： | Power56 Single |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 40V |
| 电流 - 连续漏极(Id) @ 25° C： | 22.8A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 3.1 毫欧 @ 22.8A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 152nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 8075pF @ 20V |
| 功率 - 最大： | 2.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-PQFN，Power56 |
| 供应商设备封装： | Power56 |
| 包装： | 标准包装 |
| 产品目录页面： | 1609 (CN2011-ZH PDF) |
| 其它名称： | FDMS8848NZDKR |
May 2009
FDMS8848NZ
N-Channel PowerTrench ? MOSFET
40 V, 49 A, 3.1 m
Features
General Description
Max r DS(on) = 3.1 m
Max r DS(on) = 5.1 m
at V GS = 10 V, I D = 22.8 A
at V GS = 4.5 V, I D = 17.5 A
The FDMS8848NZ has been designed to minimize losses in
power conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
Advanced Package and Silicon combination for low r DS(on)
and high efficiency
MSL1 robust package design
RoHS Compliant
r DS(on) while maintaining excellent switching performance.
Applications
Computing VR & IMVP Vcore
Secondary Side Synchronous Rectifier
POL DC/DC Converter
Oring FET/ Load Switching
Top
Bottom
S
S
S
Pin 1
G
D
D
5
6
4
3
G
S
D
7
2
S
D
D
D
D
D
8
1
S
Power 56
MOSFET Maximum Ratings T C = 25 °C unless otherwise noted
Symbol
V DS
V GS
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
T C = 25 °C
Ratings
40
±20
49
Units
V
V
I D
-Continuous (Silicon limited)
-Continuous
T C = 25 °C
T A = 25 °C
(Note 1a)
143
22.8
A
-Pulsed
90
E AS
Single Pulse Avalanche Energy
(Note 3)
480
mJ
P D
Power Dissipation
Power Dissipation
T C = 25 °C
T A = 25 °C
(Note 1a)
104
2.5
W
T J , T STG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
R
R
JC
JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(Note 1a)
1.2
50
°C/W
Package Marking and Ordering Information
Device Marking
FDMS8848NZ
Device
FDMS8848NZ
Package
Power 56
Reel Size
13’’
Tape Width
12 mm
Quantity
3000 units
?2009 Fairchild Semiconductor Corporation
FDMS8848NZ Rev C1
1
www.fairchildsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDMS8860AS | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FDMS8880 | 功能描述:MOSFET 30V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMS8888 | 功能描述:MOSFET N-Channel PwrTrench 30V 21A 9.5mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMS9600S | 功能描述:MOSFET 30V PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMS9600S_08 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual N-Channel PowerTrench㈢ MOSFET |
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