参数资料
型号: FDMS8848NZ
厂商: Fairchild Semiconductor
文件页数: 3/7页
文件大小: 0K
描述: MOSFET N-CH 40V 22.8A POWER56
产品变化通告: Power 56 Pkg/Design Change 14/Apr/2009
Product Discontinuation 27/Feb/2012
产品目录绘图: Power56 Single
标准包装: 1
系列: PowerTrench®
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 40V
电流 - 连续漏极(Id) @ 25° C: 22.8A
开态Rds(最大)@ Id, Vgs @ 25° C: 3.1 毫欧 @ 22.8A,10V
Id 时的 Vgs(th)(最大): 3V @ 250µA
闸电荷(Qg) @ Vgs: 152nC @ 10V
输入电容 (Ciss) @ Vds: 8075pF @ 20V
功率 - 最大: 2.5W
安装类型: 表面贴装
封装/外壳: 8-PQFN,Power56
供应商设备封装: Power56
包装: 标准包装
产品目录页面: 1609 (CN2011-ZH PDF)
其它名称: FDMS8848NZDKR
Typical Characteristics T J = 25 °C unless otherwise noted
90
4.0
75
60
V GS = 10 V
V GS = 4.5 V
V GS = 3.5 V
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
3.5
3.0
2.5
V GS = 3 V
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
45
30
15
V GS = 3 V
2.0
1.5
1.0
V GS = 3.5 V
V GS = 4.5 V
V GS = 10 V
0
0
1
2
3
4
0.5
0
15
30
45
60
75
90
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On Region Characteristics
1.8
I D , DRAIN CURRENT (A)
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
10
1.6
I D = 22.8 A
V GS = 10 V
8
I D = 22.8 A
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
1.4
6
1.2
1.0
4
T J = 125 o C
0.8
2
T J = 25 o C
0.6
-75
-50
-25 0 25 50 75 100 125 150
0
2
4
6
8
10
T J , JUNCTION TEMPERATURE ( o C )
Figure 3. Normalized On Resistance
vs Junction Temperature
90
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
100
75
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
10
V GS = 0 V
60
V DS = 5 V
1
T J = 150 o C
T J = 25 o C
45
30
T J = 150 o C
0.1
15
T J = 25 o C
0.01
T J = -55 o C
T J = -55 o C
0
0.001
0
1
2
3
4
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
V SD , BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
?2009 Fairchild Semiconductor Corporation
FDMS8848NZ Rev C1
3
www.fairchildsemi.com
相关PDF资料
PDF描述
FDMS8880 MOSFET N-CH 30V 13.5A POWER56
FDMS9620S MOSFET N-CHAN DUAL 30V POWER56
FDN302P MOSFET P-CH 20V 2.4A SSOT3
FDN304PZ MOSFET P-CH 20V 2.4A SSOT-3
FDN304P MOSFET P-CH 20V 2.4A SSOT3
相关代理商/技术参数
参数描述
FDMS8860AS 制造商:Fairchild Semiconductor Corporation 功能描述:
FDMS8880 功能描述:MOSFET 30V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDMS8888 功能描述:MOSFET N-Channel PwrTrench 30V 21A 9.5mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDMS9600S 功能描述:MOSFET 30V PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDMS9600S_08 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual N-Channel PowerTrench㈢ MOSFET