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| 型号： | FDMS8880 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 13.5A POWER56 |
| 产品变化通告： | Power 56 Pkg/Design Change 24/Nov/2009 |
| 产品目录绘图： | Power56 Single |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 13.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 8.5 毫欧 @ 13.5A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 33nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1585pF @ 15V |
| 功率 - 最大： | 2.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-PQFN，Power56 |
| 供应商设备封装： | Power56 |
| 包装： | 标准包装 |
| 产品目录页面： | 1608 (CN2011-ZH PDF) |
| 其它名称： | FDMS8880DKR |
May 2009
FDMS8880
N-Channel PowerTrench ? MOSFET
30 V, 21 A, 8.5 m
Features
General Description
Max r DS(on) = 8.5 m
Max r DS(on) = 13.0 m
at V GS = 10 V, I D = 13.5 A
at V GS = 4.5 V, I D = 10.9 A
The FDMS8880 has been designed to minimize losses in power
conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
Advanced Package and Silicon combination
for low r DS(on) and high efficiency
MSL1 robust package design
RoHS Compliant
Top
Bottom
r DS(on) while maintaining excellent switching performance.
Applications
Synchronous Buck for Notebook Vcore and Server
Notebook Battery Pack
Load Switch
S
S
S
Pin 1
G
D
D
5
6
4
3
G
S
D
7
2
S
D
D
D
D
D
8
1
S
Power 56
MOSFET Maximum Ratings T A = 25 °C unless otherwise noted
Symbol
V DS
V GS
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
T C = 25 °C
Ratings
30
±20
21
Units
V
V
I D
-Continuous (Silicon limited)
-Continuous
T C = 25 °C
T A = 25 °C
(Note 1a)
51
13.5
A
-Pulsed
80
E AS
Single Pulse Avalanche Energy
(Note 3)
60
mJ
P D
Power Dissipation
Power Dissipation
T C = 25 °C
T A = 25 °C
(Note 1a)
42
2.5
W
T J , T STG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
R
R
JC
JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(Note 1a)
3.3
50
°C/W
Package Marking and Ordering Information
Device Marking
FDMS8880
Device
FDMS8880
Package
Power 56
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
?2009 Fairchild Semiconductor Corporation
FDMS8880 Rev.C1
1
www.fairchildsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| FDMS9620S | MOSFET N-CHAN DUAL 30V POWER56 |
| FDN302P | MOSFET P-CH 20V 2.4A SSOT3 |
| FDN304PZ | MOSFET P-CH 20V 2.4A SSOT-3 |
| FDN304P | MOSFET P-CH 20V 2.4A SSOT3 |
| FDN306P | MOSFET P-CH 12V 2.6A SSOT3 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDMS8888 | 功能描述:MOSFET N-Channel PwrTrench 30V 21A 9.5mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMS9600S | 功能描述:MOSFET 30V PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMS9600S_08 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual N-Channel PowerTrench㈢ MOSFET |
| FDMS9620S | 功能描述:MOSFET 30V Dual N-Ch PowerTrench? MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMS9620S_07 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual N-Channel PowerTrench㈢ MOSFET |
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